MXene Quantum Dot/Polymer Hybrid Structures with Tunable Electrical Conductance and Resistive Switching for Nonvolatile Memory Devices

Abstract

Emerging polymer memory devices with resistive switching are promising alternatives to existing conventional random access memory technology due to their ability of information storage and process. [1-4] An effective strategy to realize resistive switching for memory effect is organicinorganic hybrid design in polymer device, with the merits of tailorable components, tunable properties, solution process and low-cost manufacturing. [5-8] In the organicinorganic hybrid systems, insulating or semiconducting polymers are widely used as active matrix, low dimensional inorganic materials including zero dimensional (0D) nanodots, [9,10] 1D nanotubes [11,12] and 2D nanosheets [13,14] are introduced into polymer matrix as charge trapping to trigger the resistive switching. Among these nanomaterials, quantum dots (QDs) have attracted much attention because of outstanding quantum confinement for charge trapping and well dispersion in matrix for high reproducibility as well as operation stability. Recently, a series of novel QDs derived from 2D materials have been successfully synthesized and applied into polymer memories, such as graphene QDs, [15,16] black phosphorus QDs, [17,18] and transition-metal dichalcogenide (TMD) QDs, [19] with the function of nonvolatile write once read many times (WORM) and Flash memory effect. [20,21] More recently, MXene nanosheets, referring to a new class of 2D materials, [22,23] have aroused extensive attention owing to their metallic conductivity, abundant active sites, and hydrophilic surface. Compared to intrinsic 2D MXene nanosheets, the smallsized MXene with a diameter of less than 10 nm, referred as MXene quantum dots (MQDs), [24,25] shows stronger quantum confinement, edge effect, and hydrophilic properties, making them very promising to disperse in water soluble polymer and act as charge trapping center. [26,27] Therefore, constructing MQDs-polymer hybrid architecture will provide the feasibility of memory achievement for data storage and extend their application in information fields. [28] Herein, for the first time, we report the controllable resistive switching and nonvolatile memory behaviors in MQDs and PVP hybrid composite films. By modulating MQDs doping

Exploration of 2D Ti3C2 MXene for all solution processed piezoelectric nanogenerator applications

“…In another recent study, the MXene-based piezoelectric sensor was studied by Wang et al and found that better dipole polarization of PVDF-TrFE is obtained because of improved conductivity resulting from the higher static electric field force 23 . The hydrophilic properties of MXene attributed to the presence of the surface terminations are reported to promote the dispersion of MXene in the water-soluble polymer 24 . In addition to the aforementioned approaches to improve the electrical performance of nanogenerators, different MXene concentrations will be explored to identify the optimum device performance.…”

Sodium doping for enhanced performance by highly efficient CsPbBr3 quantum dot-based electroluminescent light-emitting diodes

“…With their intriguing advantages, perovskite QDs have been widely used for many applications in light-emitting diodes (QLEDs), 7 solar cells, 8 photodetectors, 9 resistive switching memory and other electronic devices. 10 In particular, through the modification of the CsPbX 3 QDs and optimization of the device structure, the external quantum efficiency (EQE) of the CsPbX 3 -QD-based electroluminescent (EL) LED devices has been significantly improved from the first reported value of 0.12% to 21%. 11,12 Even though perovskite QDs have made great progress in QLED devices, [13][14][15][16] the surface defects of perovskite QDs are still the main problem hindering their further practical application.…”

Realizing the Conversion of Resistive Switching Behavior from Binary to Ternary by Adjusting the Charge Traps in the Polymers

“…The electrical conductivity of the device jumps to LRS, and the high current density ohmic transmission at this stage may be attributed to the conductive filament. TFLC is the transition stage from OC to SCLC in the presence of multiple traps, but the two polymers PF and PCz have no trap effect, which is absent from this conduction region. − …”