Transfer printing by kinetic control of adhesion to an elastomeric stamp

Meitl, Matthew A.; Zhu, Zhengtao; Kumar, V.; Lee, Keon Jae; Feng, Xue; Huang, Yonggang; Adesida, Ilesanmi; Nuzzo, Ralph G.; Rogers, John A.

doi:10.1038/nmat1532

Cited by 1,306 publications

(1,181 citation statements)

References 26 publications

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“…In brief, heavily boron-doped single crystal SiNMs are first formed on an SOI substrate and then released by selective etching-away of buried oxide. The released SiNMs are transferred to diamond substrate via the stamp-assisted transfer printing method 20 . The diamond plate bearing the SiNMs is annealed via RTA to first form a stronger bonding and then to induce boron diffusion from Si into diamond.…”

Section: Abstract: With the Best Overall Electronic And Thermal Propementioning

confidence: 99%

Thermal diffusion boron doping of single-crystal natural diamond

Seo

Mikael

et al. 2016

Journal of Applied Physics

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Abstract:With the best overall electronic and thermal properties, single crystal diamond (SCD) is the extreme wide bandgap material that is expected to revolutionize power electronics and radio-frequency electronics in the future. However, turning SCD into useful semiconductors requires overcoming doping challenges, as conventional substitutional doping techniques, such as thermal diffusion and ion implantation, are not easily applicable to SCD. Here we report a simple and easily accessible doping strategy demonstrating that electrically activated, substitutional doping in SCD without inducing graphitization transition or lattice damage can be readily realized with thermal diffusion at relatively low temperatures by using heavily doped Si nanomembranes as a unique dopant carrying medium. Atomistic simulations elucidate a vacancy exchange boron doping mechanism that occur at the bonded interface between Si and diamond.We further demonstrate selectively doped high voltage diodes and half-wave rectifier circuits using such doped SCD. Our new doping strategy has established a reachable path toward using SCDs for future high voltage power conversion systems and for other novel diamond based electronic devices. The novel doping mechanism may find its critical use in other wide bandgap semiconductors.With the advent of various new renewable energy sources and the emerging need to deliver and convert energy more efficiently, power electronics have received unprecedented attention in recent years. For the last several decades, Si-based power devices have played a dominant role in power conversion electronics. Wide bandgap semiconductor material based power electronics, such as those employing GaN and SiC, are expected to handle more power with higher efficiency than Si-based ones. GaN exhibits higher saturation velocity than Si. However, the thermal conductivity of GaN is low for power conversion systems. Moreover, it is currently difficult to obtain a thick and high quality GaN layer. SiC has its own native substrate, but it has inferior performance matrices (e.g., Johnson's figure of merit) versus GaN. In comparison, diamond exhibits most of the critical material properties for power electronics, except for its small substrate size at present. Diamond has a wide bandgap, high critical electric field, high carrier mobility, high carrier saturation velocities and the highest thermal conductivity among all available semiconductor materials [1][2][3] . Due to its superior electrical properties, the thickness of the highest quality diamond required to block an equivalent amount of voltage is approximately onefifth to one-fourth the thicknesses of GaN or SiC. In particular, the superior thermal conductivity of diamond could greatly simplify the design of heat dissipation and hence simplify entire power electronics modules. Therefore, diamond is considered the best material candidate for power electronics in terms of power switching efficiency, reliability, and system volume and weight.However, besides the lack of large ar...

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Section: Abstract: With the Best Overall Electronic And Thermal Propementioning

confidence: 99%

Thermal diffusion boron doping of single-crystal natural diamond

Seo

Mikael

et al. 2016

Journal of Applied Physics

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“…Transfer-printing, combined with a selective chemical etch for epitaxial release, enables the deterministic transfer of thin, small area cells to a target substrate with micrometer precision 5 . Figure 1 shows a schematic representation of the transfer printing procedure applied to mechanical stacking.…”

Section: Heterogeneous Integrationmentioning

confidence: 99%

Realizing the next generation of CPV cells using transfer printing

Lumb

Schmieder

González

et al. 2015

AIP Conference Proceedings

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“…Structures fabricated by nTP have been employed as components in organic thin film transistors, capacitors and electrostatic lenses. It is also possible to pick up thin films from a donor substrate followed by transfer to an appropriate receiver using a patterned or planar stamp as an intermediate vehicle [115,116]. Decal transfer lithography (DTL) is a technique that involves printing of PDMS microstructures, which can be achieved through fracture of PDMS features [117] or by selective release of a thin film of PDMS being cast onto a stamp [118].…”

Section: Patterning Based On Printingmentioning

confidence: 99%

Sub-Micrometer Patterning Using Soft Lithography

Geißler

2011

Comprehensive Nanoscience and Technology

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Transfer printing by kinetic control of adhesion to an elastomeric stamp

Cited by 1,306 publications

References 26 publications

Thermal diffusion boron doping of single-crystal natural diamond

Thermal diffusion boron doping of single-crystal natural diamond

Realizing the next generation of CPV cells using transfer printing

Sub-Micrometer Patterning Using Soft Lithography

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