Transfer characteristics and high frequency modeling of logic gates using carbon nanotube field effect transistors (CNT-FETs)

Abstract

In the present work, current model equations from an analytical model for carbon nanotube field effect transistors are utilized to calculate the transfer characteristics of different logic gates such as inverters, NAND gates, and NOR gates. A small signal model has been implemented and the necessary parameters have been calculated to describe the high frequency response for these logic gates. Results show that how different diameters and wrapping angles of carbon nanotubes, determined by the chiral vector (n,m), can change the transfer characteristics, small signal parameters, and high frequency response for devices based on carbon nanotubes.

Emerging carbon nanotube electronic circuits, modeling and performance

“…In a recent work, Marulanda et al, [6,21] have proposed a current transport model for the CNT-FET, which is as follows:…”

Long Channel Carbon Nanotube as an Alternative to Nanoscale Silicon Channels in Scaled MOSFETs

“…Carbon nanotubes (CNTs) are gaining momentum in the current silicon technology as a complementary nanostructure that could reform the device architecture. CNT modeling has been rigorously studied and examined [1][2][3][4][5] to assess the performance of the device at the circuit level. Advancement of the nanotechnology devices modeling is vital for the foreseeable future of carbon nanotube as switching device, interconnect and memory in integrated circuits (ICs).…”