Long Channel Carbon Nanotube as an Alternative to Nanoscale Silicon Channels in Scaled MOSFETs

Tan, Michael Loong Peng

doi:10.1155/2013/831252

Cited by 7 publications

(6 citation statements)

References 28 publications

(32 reference statements)

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“…Interconnects also play a key role as channels reach nanometer scale and resistance surge takes on an increasing importance [2]. Carbon-based allotropes offer a distinct advantage in a variety of applications [3][4][5][6][7][8]. Graphene nanoribbons (GNRs) are one-dimensional (1D) nanostructures restricting carrier motion in only one direction, reducing scattering for enhanced mobility [6,9].…”

Section: Introductionmentioning

confidence: 99%

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Enhanced Device and Circuit‐Level Performance Benchmarking of Graphene Nanoribbon Field‐Effect Transistor against a Nano‐MOSFET with Interconnects

Chin

Lim

Wong

et al. 2014

Journal of Nanomaterials

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Comparative benchmarking of a graphene nanoribbon field-effect transistor (GNRFET) and a nanoscale metal-oxide-semiconductor field-effect transistor (nano-MOSFET) for applications in ultralarge-scale integration (ULSI) is reported. GNRFET is found to be distinctly superior in the circuit-level architecture. The remarkable transport properties of GNR propel it into an alternative technology to circumvent the limitations imposed by the silicon-based electronics. Budding GNRFET, using the circuit-level modeling software SPICE, exhibits enriched performance for digital logic gates in 16 nm process technology. The assessment of these performance metrics includes energy-delay product (EDP) and power-delay product (PDP) of inverter and NOR and NAND gates, forming the building blocks for ULSI. The evaluation of EDP and PDP is carried out for an interconnect length that ranges up to 100 μm. An analysis, based on the drain and gate current-voltage (Id-VdandId-Vg), for subthreshold swing (SS), drain-induced barrier lowering (DIBL), and current on/off ratio for circuit implementation is given. GNRFET can overcome the short-channel effects that are prevalent in sub-100 nm Si MOSFET. GNRFET provides reduced EDP and PDP one order of magnitude that is lower than that of a MOSFET. Even though the GNRFET is energy efficient, the circuit performance of the device is limited by the interconnect capacitances.

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Section: Introductionmentioning

confidence: 99%

“…The simulations in this work are carried out for the 16 nm manufacturing processes. In the following, device model framework of our previous work [7,[16][17][18][19] is extended for the simulation and analysis of GNRFET and MOSFET at 16 nm node. Circuit-level models of GNRFET are benchmarked against MOSFET.…”

Section: Introductionmentioning

confidence: 99%

Enhanced Device and Circuit‐Level Performance Benchmarking of Graphene Nanoribbon Field‐Effect Transistor against a Nano‐MOSFET with Interconnects

Chin

Lim

Wong

et al. 2014

Journal of Nanomaterials

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“…We have selected other published works on low-dimensional FETs to fairly assess the device performance of the proposed AlSi 3 FET. The selected published models include co-decorated SiNR FET [ 21 ], 27-ASiNR FET [ 20 ], Si nanowire (SiNW) FET [ 34 ], Si thin sheet FET [ 35 ], carbon nanotube (CNT) FET [ 36 ], graphene nanoribbon (GNR) FET [ 37 ], black phosphorene (BP) FET [ 38 ], and monolayer molybdenum disulfide (MoS 2 ) FET [ 39 ]. To concisely compare the device performance metrics, the comparisons are presented as bar graphs as shown in Fig 6 .…”

Section: Performances Analysis and Discussionmentioning

confidence: 99%

Device performances analysis of p-type doped silicene-based field effect transistor using SPICE-compatible model

et al. 2022

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Moore’s Law is approaching its end as transistors are scaled down to tens or few atoms per device, researchers are actively seeking for alternative approaches to leverage more-than-Moore nanoelectronics. Substituting the channel material of a field-effect transistors (FET) with silicene is foreseen as a viable approach for future transistor applications. In this study, we proposed a SPICE-compatible model for p-type (Aluminium) uniformly doped silicene FET for digital switching applications. The performance of the proposed device is benchmarked with various low-dimensional FETs in terms of their on-to-off current ratio, subthreshold swing and drain-induced barrier lowering. The results show that the proposed p-type silicene FET is comparable to most of the selected low-dimensional FET models. With its decent performance, the proposed SPICE-compatible model should be extended to the circuit-level simulation and beyond in future work.

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“…where C E and C Q are the electrostatic gate coupling capacitance of the gate oxide and the quantum capacitance of the gated SWCNT, respectively [ 30 - 33 ]. Figure 2 shows the I - V characteristics of a bare SWCNT FET for different gate voltages without any PBS and glucose concentration that is based on Equation 2.…”

Section: Methodsmentioning

confidence: 99%

Analytical modeling of glucose biosensors based on carbon nanotubes

et al. 2014

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In recent years, carbon nanotubes have received widespread attention as promising carbon-based nanoelectronic devices. Due to their exceptional physical, chemical, and electrical properties, namely a high surface-to-volume ratio, their enhanced electron transfer properties, and their high thermal conductivity, carbon nanotubes can be used effectively as electrochemical sensors. The integration of carbon nanotubes with a functional group provides a good and solid support for the immobilization of enzymes. The determination of glucose levels using biosensors, particularly in the medical diagnostics and food industries, is gaining mass appeal. Glucose biosensors detect the glucose molecule by catalyzing glucose to gluconic acid and hydrogen peroxide in the presence of oxygen. This action provides high accuracy and a quick detection rate. In this paper, a single-wall carbon nanotube field-effect transistor biosensor for glucose detection is analytically modeled. In the proposed model, the glucose concentration is presented as a function of gate voltage. Subsequently, the proposed model is compared with existing experimental data. A good consensus between the model and the experimental data is reported. The simulated data demonstrate that the analytical model can be employed with an electrochemical glucose sensor to predict the behavior of the sensing mechanism in biosensors.

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Long Channel Carbon Nanotube as an Alternative to Nanoscale Silicon Channels in Scaled MOSFETs

Cited by 7 publications

References 28 publications

Enhanced Device and Circuit‐Level Performance Benchmarking of Graphene Nanoribbon Field‐Effect Transistor against a Nano‐MOSFET with Interconnects

Enhanced Device and Circuit‐Level Performance Benchmarking of Graphene Nanoribbon Field‐Effect Transistor against a Nano‐MOSFET with Interconnects

Device performances analysis of p-type doped silicene-based field effect transistor using SPICE-compatible model

Analytical modeling of glucose biosensors based on carbon nanotubes

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