Emerging carbon nanotube electronic circuits, modeling and performance

Abstract

In this paper, a CNT interconnect model is presented and combined with a CNT-FET model to study the performance of CNT-FET circuits at very high frequencies. An all complementary CNT-FET inverter pair using CNT interconnection is modeled and characterized. Cadence/Spectre simulations show that CNT-FET circuits can operate at GHz frequencies and CNT interconnects are able to provide enough bandwidth for GHz operation of CNT-FETs circuits.

Comparison of propagation delay characteristics for single-walled CNT bundle and multiwalled CNT in global VLSI interconnects

“…The RLC model of SWNT bundle [26,31] considers all individual SWNTs at parallel directions in the bundle. The spacing between SWNTs in the bundle is determined by vander waals forces between the atoms in adjacent nanotubes.…”

Numerical Modeling of the I-V Characteristics of Carbon Nanotube Field Effect Transistors

“…Carbon nanotubes also exhibit large current capabilities of ~10 -9 A/cm 2 , (Wei et al, 2001;Yao et al, 2000) and it has also been reported that doping can be avoided in the CNT fabrication process, yet still achieving complementary CNT-FETs (Zhang et al, 2007). With carbon nanotubes interconnects being also a major target of research (Koo et al, 2007;Xu et al, 2008) and a completely carbon nanotube based integrated circuit (IC) already reported (Liang et al, 2009) (Javey et al, 2004;Wang et al, 2003).…”