Trade‐Off Between Data Retention and Switching Speed in Resistive Switching ReRAM Devices

Abstract

Memristive switching devices are promising for future data storage and neuromorphic computing applications to overcome the scaling and power dissipation limits of classical CMOS technology. Many groups have engineered bilayer oxide structures to enhance the switching performance especially in terms of retention and device reliability. Here, introducing retention enhancement oxide layers into the memristive stack is shown to result in a reduction of the switching speed not only by changing the voltage and temperature distribution in the cell, but also by influencing the rate‐limiting‐step of the switching kinetics. In particular, it is demonstrated that by introducing a retention enhancement layer into resistive switching SrTiO3 devices, the kinetics are no longer determined by the interface exchange reaction between switching oxide and active electrode, but depend on the oxygen ion migration in the additional interface layer. Thus, the oxygen migration barrier in the additional layer determines the switching speed. This trade‐off between retention and switching speed is of general importance for rational engineering of memristive devices.

Designing zero-dimensional dimer-type all-inorganic perovskites for ultra-fast switching memory

“…Examples include process-dependent materials characteristics such as defect concentration, morphology, grain size, homogeneity, and device structure 52 . However, the migration barrier of a halide vacancy is one of the main parameters that can affect the operation speed of RSM devices 53 , 54 , so it can be used to screen candidate materials. In the crystal structures considered in this study, a halide vacancy can follow either an intra-octahedron path or an inter-octahedron path (Supplementary Fig.…”

Intrinsic RESET speed limit of valence change memories

“…The sudden current increase, may initiate an oxygen exchange between the oxide and the active Pt electrode, which leads to a permanent change in the device's resistance. Such an exchange was also observed in the so-called "eightwise" switching mode, which has been observed in many transition metal oxides [63][64][65][66], including TaO x -based devices [46]. This oxygen exchange could also be the origin of the permanent decrease in resistance during the unipolar SET, and could be suppressed in other studies by introducing an oxygen blocking layer such as C [46] or Al 2 O 3 [64,66].…”

“…More details on the device fabrication can be found in [68] and [69] for the TaO x -and the ZrO x -based device, respectively. The 1.0 nm Al 2 O 3 layer was grown by atomic layer deposition (ALD), using trimethylaluminum (TMA) and a remote RF oxygen plasma source [64,66]. This process ensures a uniform and dense Al 2 O 3 layer on the sample surface.…”

Bi‐Stable Resistance Generation Mechanism for Oxygenated Amorphous Carbon‐Based Resistive Random‐Access Memory

“…The electroforming process is essential for producing oxygen vacancy filaments in the binary metal oxide-based ReRAM. [27][28][29][30][31][32][33][34][35][36] The bottom electrode has been used by a reactive electrode (e.g., W or Al), while the top electrode has been utilized by an inert electrode (e.g., Pt or TiN). On the other hand, the negatively charged oxygen ions (i.e., O 2− ) in a binary metal oxide (i.e., HfO x ) resistive layer drifted and diffused from the top inert electrode (i.e., Pt) to the bottom reactive electrode (i.e., W) when a negative bias was applied to the inert top electrode (i.e., Pt), resulting in the production of oxygen vacancy (V o 2+ ) filaments.…”