Towards fabrication of 3D isotopically modulated vertical silicon nanowires in selective areas by nanosphere lithography

Hamdana, Gerry; Südkamp, T.; Descoins, Marion; Mangelinck, Dominique; Caccamo, Lorenzo; Bertke, Maik; Wasisto, Hutomo Suryo; Bracht, H.; Peiner, Erwin

doi:10.1016/j.mee.2017.04.030

Cited by 36 publications

(25 citation statements)

References 57 publications

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“…Based upon the bottom-up and top down approaches, numerous methods have been used to fabricate SiNWs such as vapor-liquid-solid, thermal evaporation, molecular beam epitaxy, laser ablation, and lithography [12][13][14][15][16]. However, these techniques have some limitations as they generally require expensive and complex equipment, employ hazardous silicon precursors, and involve high vacuum and high temperature [17].…”

Section: Introductionmentioning

confidence: 99%

Elucidating the Effect of Etching Time Key-Parameter toward Optically and Electrically-Active Silicon Nanowires

et al. 2020

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In this work, vertically aligned silicon nanowires (SiNWs) with relatively high crystallinity have been fabricated through a facile, reliable, and cost-effective metal assisted chemical etching method. After introducing an itemized elucidation of the fabrication process, the effect of varying etching time on morphological, structural, optical, and electrical properties of SiNWs was analysed. The NWs length increased with increasing etching time, whereas the wires filling ratio decreased. The broadband photoluminescence (PL) emission was originated from self-generated silicon nanocrystallites (SiNCs) and their size were derived through an analytical model. FTIR spectroscopy confirms that the PL deterioration for extended time is owing to the restriction of excitation volume and therefore reduction of effective light-emitting crystallites. These SiNWs are very effective in reducing the reflectance to 9-15% in comparison with Si wafer. I-V characteristics revealed that the rectifying behaviour and the diode parameters calculated from conventional thermionic emission and Cheung's model depend on the geometry of SiNWs. We deduce that judicious control of etching time or otherwise SiNWs' length is the key to ensure better optical and electrical properties of SiNWs. Our findings demonstrate that shorter SiNWs are much more optically and electrically active which is auspicious for the use in optoelectronic devices and solar cells applications.Nanomaterials 2020, 10, 404 2 of 18 time-consuming and therefore hindered their applications for commercialized products. In contrast, an effective and promising synthetic method namely metal assisted chemical etching (MACE) has been proposed [2,4,[18][19][20]. This technique is simple, rapid, low cost, and suitable for both industrial and laboratory scales. Moreover, MACE allows to obtain high crystalline SiNWs quality, as well as an easy control of the different parameters including orientation, doping type, length, and diameter.The MACE method basically consists of two procedures, the formation of metal catalysts and the subsequent etching process which can be implemented either in a single step (1-MACE) [10,21] or in two steps (2-MACE) [17-20]. Moreover, the formation method, etching time, etching temperature, metal deposition time, and lastly the etchants' concentrations have a crucial influence on the morphology of SiNWs [2,5,17]. Ghosh et al. reported that SiNWs grown by MACE are usually covered with silicon nanocrystals due to the side wall etching and which are the origin of quantum confinement (QC) effects owing to their small dimensions [20]. Recently, several research groups have succeeded in the synthesis of optically-active SiNWs exhibiting a significant PL emission and a very low reflectance [3,4,17]. On the other hand, Qi et al. have demonstrated the fabrication of electrically-active SiNWs through heavily doped SiNWs with rough surface where a high Schottky barrier exists at the interface of SiNWs and the metal [22]. Nevertheless, further investigation is required t...

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Section: Introductionmentioning

confidence: 99%

Elucidating the Effect of Etching Time Key-Parameter toward Optically and Electrically-Active Silicon Nanowires

et al. 2020

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“…After functionalizing the GaN surface, the self-assembly of PNs was initiated due to nucleation and crystal growth by performing two spin coating steps. For this, the aqueous polystyrene suspension was dripped on the hydrophilic GaN surface and sedimentation after the DLVO (Derjaguin, Landau, Verwey, Overbeek)-theory has to be awaited [2]. After sedimentation, the first and slower (200 rpm) spin-coating step changed the surface tension of water surrounding the NPs and creates a lateral capillary force between the PNs.…”

Section: Nanofabrication Process and Resultsmentioning

confidence: 99%

“…It allows nanopattering of semiconductor substrates in a low-cost, high-throughput and large fabrication area process and consequently represents a good alternative to the sophisticated but expensive nanolithography methods, e.g., holographic lithography, electron beam lithography or ion beam lithography, since they are complicated, time consuming, and lowthroughput processes for small areas. Thus, several attempts have been done in the last decades to optimize process parameters, diversify the patterns by changing the incident angle, and synthesize new homogeneous colloidal crystals materials with nanosize diameters [1,2]. However, almost all known studies were focused on silicon as semiconductor substrate for nanostructure fabrication [2].…”

Section: Introductionmentioning

confidence: 99%

“…Thus, several attempts have been done in the last decades to optimize process parameters, diversify the patterns by changing the incident angle, and synthesize new homogeneous colloidal crystals materials with nanosize diameters [1,2]. However, almost all known studies were focused on silicon as semiconductor substrate for nanostructure fabrication [2]. There are only few studies, which have examined the usability of NSLL for GaN substrates so far [3].…”

Section: Introductionmentioning

confidence: 99%

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Nanofabrication of Vertically Aligned 3D GaN Nanowire Arrays with Sub-50 nm Feature Sizes Using Nanosphere Lift-off Lithography

Granz

Mariana

Hamdana

et al. 2017

Proceedings of Eurosensors 2017, Paris, France, 3–6 September 2017

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Vertically aligned 3D gallium nitride (GaN) nanowire arrays with sub-50 nm feature sizes were fabricated using a nanosphere lift-off lithography (NSLL) technique combined with hybrid top-down etching steps (i.e., inductively coupled plasma dry reactive ion etching (ICP-DRIE) and wet chemical etching). Owing to the well-controlled chemical surface treatment prior to the nanobead deposition and etching process, vertical GaN nanowire arrays with diameter of ~35 nm, pitch of ~350 nm, and aspect ratio of >10 could be realized using 500 nm polystyrene nanobead (PN) masks. This work has demonstrated a feasibility of using NSLL as an alternative for other sophisticated but expensive nanolithography methods to manufacture low-cost but highly ordered 3D GaN nanostructures.

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“…In this contribution, we utilized nanoimprint lithography (NIL) in order to avoid limitations showed by other etch mask preparation techniques, e.g., photolithography and colloidal lithography [7]. Initially, a 2-inch (100)-silicon wafer (SIEGERT Wafer GmbH, Aachen, Germany) was diced into smaller pieces of 15 mm × 15 mm substrate.…”

Section: Fabrication Of Vertical Nanowiresmentioning

confidence: 99%

Nanomechanical Traceable Metrology of Vertically Aligned Silicon and Germanium Nanowires by Nanoindentation

Hamdana

Granz

Bertke

et al. 2017

Proceedings of Eurosensors 2017, Paris, France, 3–6 September 2017

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Silicon and germanium pillar structures (i.e., micro-and nanowires) were fabricated by a top-down approach including nanoimprint lithography and cryogenic dry etching. Various etching parameters were tested to ensure a reliable fabrication process. The impression of nanomechanical properties of such 3-D structures were extracted experimentally by nanoindentation showing promising and comparative results to utilize such nanostructures as small force artefacts.

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Towards fabrication of 3D isotopically modulated vertical silicon nanowires in selective areas by nanosphere lithography

Cited by 36 publications

References 57 publications

Elucidating the Effect of Etching Time Key-Parameter toward Optically and Electrically-Active Silicon Nanowires

Elucidating the Effect of Etching Time Key-Parameter toward Optically and Electrically-Active Silicon Nanowires

Nanofabrication of Vertically Aligned 3D GaN Nanowire Arrays with Sub-50 nm Feature Sizes Using Nanosphere Lift-off Lithography

Nanomechanical Traceable Metrology of Vertically Aligned Silicon and Germanium Nanowires by Nanoindentation

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