For various lighting and monolithic sensor systems application, vertically aligned three-dimensional (3D) gallium nitride (GaN)-and indium gallium nitride (InGaN)/ GaN-based LED nanowire arrays with sub-200 nm feature sizes (down to 35 nm) were fabricated using a nanosphere liftoff lithography (NSLL) technique combined with hybrid topdown etching (i.e., inductively coupled plasma dry reactive ion etching (ICP-DRIE) and wet chemical etching). Owing to the lithographic opening and well-controlled surface functionalization prior to the polystyrene nanosphere (PN) deposition, vertical GaN nanowire arrays with an area density of 9.74 × 10 8 cm −2 and an aspect ratio of >10 could be realized in a specified large area of 1.5 × 1.5 mm 2 . Optoelectrical characteristics of the nanoLEDs were further investigated in cathodoluminescence (CL) measurements, in which multiquantum well (MQW) shows a clear CL-emission at a wavelength of 465 nm. Thus, using NSLL to manufacture low-cost but highly ordered 3D GaN-based nanowires and nanoLEDs is a feasible alternative to other sophisticated but more expensive nanolithography methods.
The integration of gallium nitride (GaN) nanowire light-emitting diodes (nanoLEDs) on flexible substrates offers opportunities for applications beyond rigid solid-state lighting (e.g., for wearable optoelectronics and bendable inorganic displays). Here, we report on a fast physical transfer route based on femtosecond laser lift-off (fs-LLO) to realize wafer-scale top–down GaN nanoLED arrays on unconventional platforms. Combined with photolithography and hybrid etching processes, we successfully transferred GaN blue nanoLEDs from a full two-inch sapphire substrate onto a flexible copper (Cu) foil with a high nanowire density (~107 wires/cm2), transfer yield (~99.5%), and reproducibility. Various nanoanalytical measurements were conducted to evaluate the performance and limitations of the fs-LLO technique as well as to gain insights into physical material properties such as strain relaxation and assess the maturity of the transfer process. This work could enable the easy recycling of native growth substrates and inspire the development of large-scale hybrid GaN nanowire optoelectronic devices by solely employing standard epitaxial LED wafers (i.e., customized LED wafers with additional embedded sacrificial materials and a complicated growth process are not required).
Continuous cell culture monitoring as a way of investigating growth, proliferation, and kinetics of biological experiments is in high demand. However, commercially available solutions are typically expensive and large in size. Digital inline-holographic microscopes (DIHM) can provide a cost-effective alternative to conventional microscopes, bridging the gap towards live-cell culture imaging. In this work, a DIHM is built from inexpensive components and applied to different cell cultures. The images are reconstructed by computational methods and the data are analyzed with particle detection and tracking methods. Counting of cells as well as movement tracking of living cells is demonstrated, showing the feasibility of using a field-portable DIHM for basic cell culture investigation and bringing about the potential to deeply understand cell motility.
Vertically aligned 3D gallium nitride (GaN) nanowire arrays with sub-50 nm feature sizes were fabricated using a nanosphere lift-off lithography (NSLL) technique combined with hybrid top-down etching steps (i.e., inductively coupled plasma dry reactive ion etching (ICP-DRIE) and wet chemical etching). Owing to the well-controlled chemical surface treatment prior to the nanobead deposition and etching process, vertical GaN nanowire arrays with diameter of ~35 nm, pitch of ~350 nm, and aspect ratio of >10 could be realized using 500 nm polystyrene nanobead (PN) masks. This work has demonstrated a feasibility of using NSLL as an alternative for other sophisticated but expensive nanolithography methods to manufacture low-cost but highly ordered 3D GaN nanostructures.
scite is a Brooklyn-based organization that helps researchers better discover and understand research articles through Smart Citations–citations that display the context of the citation and describe whether the article provides supporting or contrasting evidence. scite is used by students and researchers from around the world and is funded in part by the National Science Foundation and the National Institute on Drug Abuse of the National Institutes of Health.