Towards &amp;#x201C;atomistic&amp;#x201D; dopant profiling using SCM measurements

Aghaei, Samira; Andrei, Petru; Hagmann, Mark J.

doi:10.1109/sispad.2015.7292345

Cited by 1 publication

(1 citation statement)

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“…The numerical algorithm that we present below can be applied to any transport model that can be used to simulate the C-V curves, such as the classical drift-diffusion model, the semiclassical Boltzmann equation, or the quantum NEGF method. We assume that the doping sensitivity functions of the differential capacitance can be computed by using the numerical techniques presented in references [13,20].…”

Section: Numerical Algorithmmentioning

confidence: 99%

Untitled

2016

Adv. Electr. Comp. Eng.

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In this article we investigate the possibility to use scanning capacitance microscopy (SCM) for the 2-D and 3-D "atomistic" dopant profiling of semiconductor materials. For this purpose, we first analyze the effects of random dopant fluctuations (RDF) on SCM measurements with nanoscale probes and show that the discrete and random locations of dopant impurities significantly affect the differential capacitance measured in SCM experiments if the dimension of the probe is below 50 nm. Then, we present an algorithm to compute the x, y, and z coordinates of the ionized impurities in the semiconductor material using a set of SCM measurements. The algorithm is based on evaluating the doping sensitivity functions of the differential capacitance and uses a gradientbased iterative method to compute the locations of dopants. Finally, we discuss a standard simulation case and show that we are able to successfully retrieve the locations of the ionized impurities using the proposed algorithm.

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Section: Numerical Algorithmmentioning

confidence: 99%

Untitled

2016

Adv. Electr. Comp. Eng.

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Towards “atomistic” dopant profiling using SCM measurements

Cited by 1 publication

References 5 publications

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