Abstract:In this article we investigate the possibility to use scanning capacitance microscopy (SCM) for the 2-D and 3-D "atomistic" dopant profiling of semiconductor materials. For this purpose, we first analyze the effects of random dopant fluctuations (RDF) on SCM measurements with nanoscale probes and show that the discrete and random locations of dopant impurities significantly affect the differential capacitance measured in SCM experiments if the dimension of the probe is below 50 nm. Then, we present an algorith… Show more
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