In this article we investigate the possibility to use scanning capacitance microscopy (SCM) for 3-D dopant profiling. It is shown that SCM with probes that have a radius under 10 nm, could be potentially used to determine the x-y-z coordinates of the doping atoms (or ionized impurities) in a layer of a thickness equal to the width of the depletion region. An inversion algorithm that computes the locations of the dopants from the experimental capacitance-voltage (C-V) measurements is presented for the first time. The algorithm is based on the evaluation of the doping sensitivity functions of the differential capacitance and uses a gradient-based iterative method to compute the locations of the dopants.
Design and simulations of a novel RF MEMS switch is reported as a solution to many RF wireless applications. A new comb structure for RF MEMS switch is proposed for low voltage and high frequency operations. Isolation degree and actuation voltage, both improved by the new structure. The mechanical and electromagnetic simulation results show better performance for this new switch compared to parallel plate switch. The simulation is done by the intellisuit and HFSS softwares. The Simulation results show that the actuation voltage is decreased by 13% and the linearity of the switch displacement with respect to the actuation voltage is improved by 22% compared to the parallel plate structure. The HFSS simulation results indicate an insertion loss better than 0.33 dB at 50 GHz and isolation greater than 13.4 dB at 50 GHz.
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