A low voltage vertical comb RF MEMS switch

Aghaei, Samira; Abbaspour-Sani, Ebrahim

doi:10.1007/s00542-010-1032-x

Cited by 13 publications

(3 citation statements)

References 3 publications

(4 reference statements)

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“…Traditional optimization methods are limited to the response of one output parameter of the MEMS device and are based on optimization in one area of physics and a logical combination of individual designs, which provides overall optimization [ 45 , 46 , 47 , 48 , 49 , 50 , 51 , 52 , 53 ]. However, these methods are not an effective approach for MEMS devices, in particular RF MEMS devices, which are complex structures with multiphysical interaction.…”

Section: Methodology Of Designing High-performance Capacitive Rf Mems...mentioning

confidence: 99%

Investigation and Research of High-Performance RF MEMS Switches for Use in the 5G RF Front-End Modules

2023

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In this article, based on the developed methodology, the stages of designing two designs of high-performance radio-frequency single-pole single-throw microelectromechanical switches are investigated. These radio-frequency microelectromechanical switches are designed to operate at a central resonant frequency of 3.6 GHz and 3.4 GHz, respectively, as well as to work both in mobile communication devices and in the design of the architecture of 5G mobile networks, in particular in arrays of integrated antennas and radio-frequency interface modules. The manufacture and study of two designed structures are researched. For the first manufactured experimental sample in the open state the insertion loss is no more than −0.69 dB and the reflection loss is −28.35 dB, and in the closed state the isolation value is at least −54.77 dB at a central resonant frequency of 3.6 GHz. For the second in the open state the value of the insertion loss is no more than −0.67 dB and the reflection loss is −20.7 dB, and in the closed state the isolation value is not less than −52.13 dB at the central resonant frequency of 3.4 GHz. Both manufactured experimental samples are characterized by high linearity, as well as a small value of contact resistance in the closed state.

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Section: Methodology Of Designing High-performance Capacitive Rf Mems...mentioning

confidence: 99%

Investigation and Research of High-Performance RF MEMS Switches for Use in the 5G RF Front-End Modules

2023

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“…RF MEMS switches can be widely categorized as shunt or series type based on the configuration. In RF MEMS switches, series switches are considered as cantilever beam, while shunt switches are considering to be fixed‐fixed beam . The literature survey of given frequencies is that the RF MEMS novel capacitive shunt switch with a butterfly structured beam is used to reduce the actuation voltage with a 3‐μm air gap and aluminum nitride as a dielectric medium.…”

Section: Introductionmentioning

confidence: 99%

Beam and dielectric materials impact on improvement of the performance of a novel capacitive shunt RF MEMS switch

Sravani

Babu

Ramesh

et al. 2019

Int J Numerical Modelling

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This paper presents a novel radiofrequency micro‐electro‐mechanical systems (RF MEMS) shunt capacitive switch having high isolation and low insertion loss for microphone applications. The device optimization and various electromechanical analysis are performed using a finite element modeler (FEM) solver. The proposed switch results in a pull‐in voltage of 36.88 V to displace movable beam 2/3rd of its initial gap. By varying beam material, dielectric material, beam‐dielectric thickness, and air gap between movable beam and dielectric layer, various electromechanical and electromagnetic analyses are carried out. For better isolation, silicon nitride (Si3N4) is used for the dielectric layer than hafnium oxide (HfO2) and silicon carbide (SiC). To achieve maximum displacement of the beam, various materials such as aluminum, gold, nickel, and copper are chosen; among all, this gold shows high displacement because of its good conductivity. By implementing various meandering techniques along with perforations, pull‐in voltage and stiction problems are reduced. The switch exhibits good return loss of −28 dB and insertion loss of −0.017 dB during on‐state at 5 GHz and high isolation of −41.26 dB at 10.5 GHz during off‐state. The proposed switch is used at the subsystem/device level in the future microphone, aircraft navigation, and satellite applications.

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“…The operation voltage of a thermoelectric RF MEMS switch is lower than that of the other switches; however, thermoelectric actuation consumes high power due to thermal loss and the switching speed is slower than that of the other switches. Electrostatic actuation is easy to fabricate and its power consumption is nearly zero; however, the actuation voltage is large [1][2][3][4][5][6][7][8]. To lower the operation voltage of the switch, some methods have been researched.…”

Section: Introductionmentioning

confidence: 99%

An RF MEMS switch with a differential gap between electrodes for high isolation and low voltage operation

Jang

Kang

Kim

et al. 2011

J. Micromech. Microeng.

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A double-actuation RF microelectromechanical system (MEMS) switch with high isolation and low voltage operation for RF and microwave applications is presented. The operation voltage of the suggested double-actuation vertical RF MEMS switch structure was reduced without decreasing the actuation gap. Theoretically, the operation voltage of the suggested structure is about 29% lower than that of a single-actuation vertical RF MEMS switch with the same fabrication method, electrode area and equal contact gap. The proposed RF MEMS switch was fabricated by surface micromachining with seven photo-masks on a quartz wafer. To achieve planarization and the stair-like structure, a polyimide sacrificial layer was spin-coated, cured and etched in two steps and patterned by a dry etching step which defines the double-actuation mechanism. The measured results of the fabricated RF MEMS switch demonstrate that the insertion loss was lower than 0.11 dB for the 20 V ON state, the isolation was higher than 39.1 dB for the OFF state and the return loss was better than 32.1 dB for the 20 V ON state from dc to 6 GHz. The minimum pull-in voltage of the fabricated RF MEMS switch was 10 V.

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A low voltage vertical comb RF MEMS switch

Cited by 13 publications

References 3 publications

Investigation and Research of High-Performance RF MEMS Switches for Use in the 5G RF Front-End Modules

Investigation and Research of High-Performance RF MEMS Switches for Use in the 5G RF Front-End Modules

Beam and dielectric materials impact on improvement of the performance of a novel capacitive shunt RF MEMS switch

An RF MEMS switch with a differential gap between electrodes for high isolation and low voltage operation

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