Photoswitching molecular electronic devices with reduced graphene oxide (rGO) top electrodes on flexible substrates are fabricated and characterized. It has been reported previously that diarylethene molecular devices with poly‐(3,4‐ethylenedioxythiophene) stabilized with poly‐(4‐styrenesulfonic acid)/Au top electrodes can hold two stable electrical conductance states when the devices are exposed to UV or visible light during device fabrication. However, those devices fail to show the reversible switching phenomenon in response to illumination after device fabrication. By employing conducting and transparent rGO top electrodes, it is demonstrated that the diarylethene molecular devices show a reversible switching phenomenon, i.e., the fabricated devices change their conductance state in response to the alternating illumination with UV and visible light. Furthermore, the molecular devices with rGO top electrodes also exhibit good longtime stability and reliable electrical characteristics when subjected to various mechanical stresses (bending radius down to 5 mm and bending cycle over 104).

As two-dimensional (2D) transition metal dichalcogenides electronic devices are scaled down to the sub-micrometer regime, the active layers of these materials are exposed to high lateral electric fields, resulting in electrical breakdown. In this regard, understanding the intrinsic nature in layer-stacked 2D semiconducting materials under high lateral electric fields is necessary for the reliable applications of their field-effect transistors. Here, we explore the electrical breakdown phenomena originating from avalanche multiplication in MoS field-effect transistors with different layer thicknesses and channel lengths. Modulating the band structure and bandgap energy in MoS allows the avalanche multiplication to be controlled by adjusting the number of stacking layers. This phenomenon could be observed in transition metal dichalcogenide semiconducting systems due to its quantum confinement effect on the band structure. The relationship between the critical electric field for avalanche breakdown and bandgap energy is well fitted to a power law curve in both monolayer and multilayer MoS.

Until now, a specifically designed functional molecular species has been recognized as an absolute necessity for realizing the diode's behavior in molecular electronic junctions. Here, we suggest a facile approach for the implementation of a tailored diode in a molecular junction based on non-functionalized alkyl and conjugated molecular monolayers. A twodimensional semiconductor (MoS 2 and WSe 2 ) is used as a rectifying designer at the alkyl or conjugated molecule/Au interface. From the adjustment of band alignment at molecules/ two-dimensional semiconductor interface that can activate different transport pathways depending on the voltage polarity, the rectifying characteristics can be implemented and controlled. The rectification ratio could be widely tuned from 1.24 to 1.83 × 10 4 by changing the molecular species and type and the number of layers of the two-dimensional semiconductors in the heterostructure molecular junction. Our work sets a design rule for implementing tailored-diode function in a molecular heterojunction structure with nonfunctionalized molecular systems.

The realization of high-yield, stable molecular junctions has been a long-standing challenge in the field of molecular electronics research, and it is an essential prerequisite for characterizing and understanding the charge transport properties of molecular junctions prior to their device applications. Here, we introduce a new approach for obtaining high-yield, vertically structured metal-molecule-metal junctions in which the top metal electrodes are formed on alkanethiolate self-assembled monolayers by a direct metal transfer method without the use of any additional protecting interlayers in the junctions. The fabricated alkanethiolate molecular devices exhibited considerably improved device yields (∼70%) in comparison to the typical low device yields (less than a few %) of molecular junctions in which the top metal electrodes are fabricated using the conventional evaporation method. We compared our method with other molecular device fabrication methods in terms of charge transport parameters. This study suggests a potential new device platform for realizing robust, high-yield molecular junctions and investigating the electronic properties of devices.

We fabricate and characterize vertical molecular junctions consisting of self-assembled monolayers of diarylethene (DAE) contacted by a multilayer graphene (MLG) electrode on the top and gold on the bottom. The DAE molecular junctions show two stable electrical states, a closed state (high conductance) or an open state (low conductance), which are created upon illumination with UV or visible light, respectively. For the Au-DAE-MLG junction structure, we observe that the current levels between the two conductance states are separated by 2 orders of magnitude. However, in a real-time measurement, we observe only unidirectional switching behavior from the open to the closed state.