2000 International Conference on Ion Implantation Technology Proceedings. Ion Implantation Technology - 2000 (Cat. No.00EX432)
DOI: 10.1109/iit.2000.924126
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Towards a comprehensive model of electronic stopping in amorphous and crystalline silicon

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“…In addition, the electronic stopping of slow channelled ions has been predicted to oscillate with the projectile atomic number Z 1 by many theoretical and experimental studies [30][31][32]. This oscillation has also been observed specifically in single-crystalline Si [33][34][35][36], even though only one of these works is experimental, and employed samples are not well-defined. For amorphous targets, Z 1 oscillations have been observed e.g.…”
Section: Introductionmentioning
confidence: 99%
“…In addition, the electronic stopping of slow channelled ions has been predicted to oscillate with the projectile atomic number Z 1 by many theoretical and experimental studies [30][31][32]. This oscillation has also been observed specifically in single-crystalline Si [33][34][35][36], even though only one of these works is experimental, and employed samples are not well-defined. For amorphous targets, Z 1 oscillations have been observed e.g.…”
Section: Introductionmentioning
confidence: 99%