Effects of Ion Channeling and Co-Implants on Ion Ranges and Damage in Si: Studies With PL, SRP, SIMS and MC Models

Current, Michael I.; Sakaguchi, Takuya; Kawasaki, Yoji; Samu, Viktor; Pongracz, Anita; Sinko, Luca; Kerekes, Árpád; Durkó, Zsolt

doi:10.1109/jeds.2024.3379328

IEEE J. Electron Devices Soc.

2024

DOI: 10.1109/jeds.2024.3379328

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Effects of Ion Channeling and Co-Implants on Ion Ranges and Damage in Si: Studies With PL, SRP, SIMS and MC Models

Michael I. Current,

Takuya Sakaguchi,

Yoji Kawasaki

et al.

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Effects of Ion Channeling and Co-Implants on Ion Ranges and Damage in Si: Studies With PL, SRP, SIMS and MC Models

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