Total Ionizing Dose Induced Charge Carrier Scattering in Graphene Devices

Cress, Cory D.; Champlain, James G.; Esqueda, Ivan Sanchez; Robinson, Jeremy T.; Friedman, Adam L.; McMorrow, Julian J.

doi:10.1109/tns.2012.2221479

Cited by 36 publications

(31 citation statements)

References 31 publications

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“…For large values of effective vertical field (E eff ) the extractions merge at the pre-irradiation curve as mechanisms other than charged impurity scattering become dominant for large carrier densities ( ). Similar results were observed recently for Cu-CVD back-gated GFETs irradiated with Co-60 gamma rays [24]. Additionally, an increase in μ eff is observed for E eff < 1 MV/cm that is consistent with the observations made in [19] and attributed to scatterer transparency that occurs as carrier wavelengths becomes larger than scatterer spacing.…”

Section: Discussionsupporting

confidence: 91%

Modeling Radiation-Induced Degradation in Top-Gated Epitaxial Graphene Field-Effect-Transistors (FETs)

et al. 2013

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This paper investigates total ionizing dose (TID) effects in top-gated epitaxial graphene field-effect-transistors (GFETs). Measurements reveal voltage shifts in the current-voltage (I-V) characteristics and degradation of carrier mobility and minimum conductivity, consistent with the buildup of oxide-trapped charges. A semi-empirical approach for modeling radiation-induced degradation in GFETs effective carrier mobility is described in the paper. The modeling approach describes Coulomb and short-range scattering based on calculations of charge and effective vertical field that incorporate radiation-induced oxide trapped charges. The transition from the dominant scattering mechanism is correctly described as a function of effective field and oxide trapped charge density. Comparison with experimental data results in good qualitative agreement when including an empirical component to account for scatterer transparency in the low field regime.

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Section: Discussionsupporting

confidence: 91%

Modeling Radiation-Induced Degradation in Top-Gated Epitaxial Graphene Field-Effect-Transistors (FETs)

et al. 2013

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“…Similar turn-around behavior was found in all four devices under test. These results contrast significantly with the responses of exposed graphene structures in contact with SiO or high-K insulators, where larger shifts and no turnaround effects are typically observed with 10-keV x-ray irradiation [17]- [19]. Fig.…”

Section: Methodsmentioning

confidence: 57%

“…The Dirac point of the device shifts slightly negatively at low radiation doses (evidence of hole trapping), and then shifts positively (evidence of negatively charged interface defects) for higher dose exposures to 1 Mrad(SiO ). The changes in Dirac point and decreases in mobility are relatively small in these devices, compared with devices having graphene layers in contact with SiO or high-K dielectric materials [17]- [19]. The potential nature of the charge trapping in the boron nitride is discussed, and a potential, additional role for interface defects is investigated via first principles calculations.…”

Section: Introductionmentioning

confidence: 97%

Total Ionizing Dose Effects on hBN Encapsulated Graphene Devices

Zhang

Wang

Duan

et al. 2014

IEEE Trans. Nucl. Sci.

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The constant-voltage electrical stress and 10-keV x-ray irradiation responses of encapsulated graphene-hBN devices are evaluated. Both constant-voltage stress and x-ray exposure induce only modest shifts in the current and the Dirac point of the graphene. Charge trapping at or near the graphene/BN interface is observed after x-ray irradiation. The experimental results suggest that net hole trapping occurs in the BN at low doses and that net electron trapping occurs at higher doses. First-principles calculations also demonstrate that hydrogenated substitutional carbon impurities at B/N sites at or near the graphene/BN interface can play an additional role in the radiation response of these structures.

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“…On the contrary, when irradiated in vacuum, ambipolar graphene devices on 100-nm SiO 2 exhibited negative V th [76]. These devices, however, also included a trimethylsiloxy (TMS) monolayer between graphene and SiO 2 in order to stabilize the polarity of the electric field at the TMS/graphene interface and subsequently reduce gate hysteresis.…”

Section: Thin Film 2-d Material and Nanotube Transistorsmentioning

confidence: 99%

Total Ionizing Dose Hardened and Mitigation Strategies in Deep Submicrometer CMOS and Beyond

Chatzikyriakou

Morgan

Groot

2018

IEEE Trans. Electron Devices

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-From man-made satellites and interplanetary missions to fusion power plants, electronic equipment that needs to withstand various forms of irradiation is an essential part of their operation. Examination of total ionizing dose (TID) effects in electronic equipment can provide a thorough means to predict their reliability in conditions where ionizing dose becomes a serious hazard. In this paper, we provide a historical overview of logic and memory technologies that made the biggest impact both in terms of their competitive characteristics and their intrinsically hardened nature against TID. Further to this, we also provide guidelines for hardened device designs and present the cases where hardened alternatives have been implemented and tested in the lab. The technologies that we examine range from silicon-on-insulator and FinFET to 2-D semiconductor transistors and resistive random access memory.Index Terms-2-D semiconductor, carbon, CMOS, deep submicrometer, FinFET, graphene, MoS2, resistive random access memory (RRAM), silicon-on-insulator (SOI), thin film, total ionizing dose (TID), ultrathin buried oxide (UTBOX).

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Total Ionizing Dose Induced Charge Carrier Scattering in Graphene Devices

Cited by 36 publications

References 31 publications

Modeling Radiation-Induced Degradation in Top-Gated Epitaxial Graphene Field-Effect-Transistors (FETs)

Modeling Radiation-Induced Degradation in Top-Gated Epitaxial Graphene Field-Effect-Transistors (FETs)

Total Ionizing Dose Effects on hBN Encapsulated Graphene Devices

Total Ionizing Dose Hardened and Mitigation Strategies in Deep Submicrometer CMOS and Beyond

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