Total Ionizing Dose Effects on HfO₂-Passivated Black Phosphorus Transistors

Chemical functionalization of 2D black phosphorus

“…To date, several protective strategies have been reported to enhance the stability of few‐layer BP, including physical coating with a protective layer, such as Al 2 O 3 , h ‐BN, MoS 2 , and a polymer, 58‐88 heteroatom doping, 89‐91 and chemical functionalization 92‐126 . The encapsulation of the coating layer can inhibit the interaction of oxygen with the phosphorus atoms on the BP surface and edge, thus impeding the degradation 82 .…”

Recent Developments in Black Phosphorous Transistors: A Review

“…120 Liang et al also investigated the total ionizing dose impact on BP-FETs based on high-k dielectrics and discovered that radiation endurance is high, making them suitable for space applications. 121 In order to demonstrate the BP-FET's scalability, Jinshui et al used a new electron beam lithography (EBL) method to fabricate a 20-nm-channel-length BP-MOSFET device. The fabricated top-gate BP-FETs offers good ON-current (174 µA/ µm) and transconductance (70 µS/µm) values at V ds = 0.1 V. 122 Because of its puckered crystal structure, Nazlia et al found that the back-gate BP-FET had anisotropic mobility.…”

Chemical and structural stability of 2D layered materials

“…Although pristine 2D materials, especially BP, are desirable for many promising applications owing to their extraordinary structural, mechanical and electronic properties, more stable forms of these nanomaterials are still required [221,222,[230][231][232]. In this section, we will review the major routes developed for modifying 2D materials, of which the stabilities will be improved.…”