Total dose radiation hardness of MOS devices in hermetic ceramic packages

Kohler, R.A.; Kushner, R.A.; Lee, Kuo Hua

doi:10.1109/23.25486

Cited by 60 publications

(7 citation statements)

References 13 publications

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“…Similar changes to those observed in Figs. 10 and 11 were observed by Kohler et al on a shorter time scale for devices packaged in sealed hermetic packages containing up to 0.6% of hydrogen gas, and/or irradiated in hydrogen ambient conditions [14]. Enhanced interface-trap formation also has been observed after radiation exposure when devices are exposed to hydrogen [9,15,16], suggesting that hydrogenous species may also play an important role in the aging results of Figs.…”

Section: Aging Effects In Mos Devicesmentioning

confidence: 89%

Effects of device aging on microelectronics radiation response and reliability

Fleetwood

Rodgers

Tsetseris

et al. 2007

Microelectronics Reliability

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Section: Aging Effects In Mos Devicesmentioning

confidence: 89%

Effects of device aging on microelectronics radiation response and reliability

Fleetwood

Rodgers

Tsetseris

et al. 2007

Microelectronics Reliability

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“…Several studies have reported that excess hydrogen can greatly enhance a device's radiation susceptibility [21,22,32]. Fig.…”

Section: Impact Of Hydrogenmentioning

confidence: 99%

Modeling ionizing radiation effects in solid state materials and CMOS devices

Barnaby

McLain

Esqueda

et al. 2008

2008 IEEE Custom Integrated Circuits Conference

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A comprehensive model is presented which enables the effects of ionizing radiation on bulk CMOS devices and integrated circuits to be simulated with closed form functions. The model adapts general equations for defect formation in uniform SiO 2 films to facilitate analytical calculations of trapped charge and interface trap buildup in structurally irregular and radiation sensitive shallow trench isolation (STI) oxides. A new approach whereby non-uniform defect distributions along the STI sidewall are calculated, integrated into implicit surface potential equations, and ultimately used to model radiation-induced "edge" leakage currents in n-channel MOSFETs is described. The results of the modeling approach are compared to experimental data obtained on 130 nm and 90 nm devices. The features having the greatest impact on the increased radiation tolerance of advanced deepsubmicron bulk CMOS technologies are also discussed. These features include increased doping levels along the STI sidewall.

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“…Conley et al 57,58 provided strong circumstantial evidence linking EЈ/hydrogen coupled centers to interface trap generation. Several ͑purely electrical mea-surement͒ studies 59,60 had shown that a molecular-hydrogencontaining ambient leads to an enhancement in radiation induced interface state generation. Conley et al 57,58 showed that exposing an oxide previously flooded with holes ͑to gen- erate EЈ centers͒ to an H 2 /N 2 ambient leads to a conversion of conventional EЈ centers to 74 G doublet centers as well as generation of interface state centers.…”

Section: Hydrogen Complexed Eј Centersmentioning

confidence: 99%

What can electron paramagnetic resonance tell us about the Si/SiO2 system?

Lenahan

Conley²

1998

Journal of Vacuum Science &Amp; Technology B: Microelectronics and Nanometer Structures Processing, Measurement, and Phenomena

349

238

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Electron paramagnetic resonance ͑EPR͒ measurements of Si/SiO 2 systems began over 30 years ago. Most EPR studies of Si/SiO 2 systems have dealt with two families of defects: P b centers and EЈ centers. Several variants from each group have been observed in a wide range of Si/SiO 2 samples. Some of the most basic aspects of this extensive, body of work remain controversial. EPR is an extraordinary powerful analytical tool quite widely utilized in chemistry, biomedical research, and solid state physics. Although uniquely well suited for metal-oxide-silicon ͑MOS͒ device studies, its capabilities are not widely understood in the MOS research and development community. The impact of EPR has been limited in the MOS community by a failure of EPR spectroscopists to effectively communicate with other engineers and scientists in the MOS community. In this article we hope to, first of all, ameliorate the communications problem by providing a brief but quantitative introduction to those aspects of EPR which are most relevant to MOS systems. We review, critically, those aspects of the MOS/EPR literature which are most relevant to MOS technology and show how this information can be used to develop physically based reliability models. Finally, we briefly review EPR work dealing with impurity defects in oxide thin films.

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Total dose radiation hardness of MOS devices in hermetic ceramic packages

Cited by 60 publications

References 13 publications

Effects of device aging on microelectronics radiation response and reliability

Effects of device aging on microelectronics radiation response and reliability

Modeling ionizing radiation effects in solid state materials and CMOS devices

What can electron paramagnetic resonance tell us about the Si/SiO2 system?

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