Total dose hardness of three commercial CMOS microelectronics foundries

Osborn, J.V.; Lacoe, R.C.; Mayer, D.C.; Yabiku, G.K.

doi:10.1109/23.685223

Cited by 45 publications

(22 citation statements)

References 3 publications

Supporting

Mentioning

Contrasting

Order By: Relevance

“…On the other hand, the open-layout NMOS transistors were affected by TID, as typically observed in any commercial technology [10]. As shown in Fig.…”

Section: A Core Transistorsmentioning

confidence: 79%

Radiation-induced edge effects in deep submicron CMOS transistors

Faccio

Cervelli

2005

IEEE Trans. Nucl. Sci.

369

216

View full text Add to dashboard Cite

Abstract-The study of the TID response of transistors and isolation test structures in a 130 nm commercial CMOS technology has demonstrated its increased radiation tolerance with respect to older technology nodes. While the thin gate oxide of the transistors is extremely tolerant to dose, charge trapping at the edge of the transistor still leads to leakage currents and, for the narrow channel transistors, to significant threshold voltage shift-an effect that we call Radiation Induced Narrow Channel Effect (RINCE).

show abstract

“…On the other hand, the open-layout NMOS transistors were affected by TID, as typically observed in any commercial technology [10]. As shown in Fig.…”

Section: A Core Transistorsmentioning

confidence: 79%

Radiation-induced edge effects in deep submicron CMOS transistors

Faccio

Cervelli

2005

IEEE Trans. Nucl. Sci.

369

216

View full text Add to dashboard Cite

show abstract

“…Since gate oxides in present day submicron CMOS technologies are in this range, they are becoming increasingly radiation tolerant. This has been confirmed on commercial-grade CMOS processes in several works [3,4]. Ionising radiation can nevertheless induce positive charge trapping in the still thick field and lateral oxides of modern CMOS technologies, opening up leakage current paths that can lead to device failure after a moderate level of total dose, of the order of 10-40 krad.…”

Section: Radiation Tolerant Design Approachmentioning

confidence: 80%

80-Mbit/s radiation-tolerant optical receiver for the CMS digital optical link

2000

View full text Add to dashboard Cite

The CMS tracker slow control system will use approximately 1000 digital optical links for the transmission of timing, trigger and control signals. In this system, the 80Mbit/s optical receiver at the detector end of each optical link has to be radiation hard since it will operate in the severe radiation environment of the CMS tracker (10 Mrad in 10 years). We have developed a prototype circuit in a 0.25 µm commercial CMOS process using radiation tolerant layout practices to achieve the required radiation tolerance. This effective technique consists in the systematic use of enclosed (edgeless) NMOS transistors and guardrings, and relies in the natural total dose hardness of the thin gate oxide of deep submicron processes. The circuit features an Automatic Gain Control (AGC) loop allowing detection of wide dynamic range input signals (-20 to -3 dBm) with minimum noise, compatible with the maximum expected radiation-induced drop in quantum efficiency of the PIN photodiode. A second feedback loop compensates a photodiode leakage current up to 100 µA, and the circuit outputs an LVDS signal. Four receiver channels were integrated in a 2x2mm 2 chip, out of which two were simultaneously bonded to two PIN photodiodes, and their Bit Error Rate (BER) performance was measured before and after an irradiation with 10 keV X-rays up to 20 Mrad(SiO 2 ).

show abstract

“…Fortunately, as integrated circuit technology inexorably moves to smaller feature sizes the TID damage becomes less serious [59,60]. Very thin gate oxides provide a smaller volume for accumulated positive charge, and the improved quality of the interface between the oxide and the substrate results in fewer interface states.…”

Section: Total Ionizing Dose Effectsmentioning

confidence: 99%

Magnetic Random Access Memory for Embedded Computing

Donohoe¹

2007

View full text Add to dashboard Cite

Public reporting burden for this collection of information is estimated to average 1 hour per response, including the time for reviewing instructions, searching existing data sources, gathering and maintaining the data needed, and completing and reviewing this collection of information. MRAM_II_2007-Final SPONSORING / MONITORING AGENCY NAME(S) AND ADDRESS(ES) 10. SPONSOR/MONITOR'S ACRONYM(S)Air Force Research Laboratory AFRL/RVSE Space Vehicles Directorate 3550 Aberdeen Ave. SE SPONSOR/MONITOR'S REPORTKirtland AFB, NM 87117-5776 NUMBER(S) AFRL-RV-PS-TR-2007-1196 DISTRIBUTION / AVAILABILITY STATEMENTApproved for public release; distribution is unlimited. (Clearance #VS07-0688) SUPPLEMENTARY NOTESThis report is published in the interest of scientific and technical information exchange. The established procedures for editing reports were not followed for this technical report. ABSTRACTThe goal of this research was to develop an embedded magnetic memory technology to be integrated into Complementary Metal Oxide Semiconductor (CMOS) integrated circuit fabrication process to provide radiation-hard, logic elements and small random-access memories. The goal is not to provide largescale, bulk memory, but latches and flip flops that serve as state and data registers for sequential logic, and configuration registers for configurable logic. The benefits to spacecraft systems include the ability to power-down a subsystem while retaining system state, thus saving energy until the subsystem is required. The subsystem can then be powered-up and begin operating in milliseconds. The technology is based on a unique, PacMan-shaped magnetic tunneling junction (MTJ) cell developed at the University of Idaho. The focus of this research is to refine the PacMan cell to make it practical for integration into CMOS circuits, to develop CMOS circuits that employ the magnetic cells, and to integrate the cells onto a CMOS process. The process produced two circuit designs based on magnetic memory elements: a magnetic latch, and a magnetic shadow memory to serve as a backup to volatile electronic memory. ii University of Idaho report MRAM_II_2007-Final SUBJECT TERMS CMOS, MTJ Cell

show abstract

Total dose hardness of three commercial CMOS microelectronics foundries

Cited by 45 publications

References 3 publications

Radiation-induced edge effects in deep submicron CMOS transistors

Radiation-induced edge effects in deep submicron CMOS transistors

80-Mbit/s radiation-tolerant optical receiver for the CMS digital optical link

Magnetic Random Access Memory for Embedded Computing

Contact Info

Product

Resources

About