Total analysis of surface structure and properties by UHV transfer system

Yamatani, Hiroshi; Hattori, Ken; Matsuta, Takahisa; Ito, Takuji; Nohno, Tomohito; Hori, Maiya; Miyatake, Y.; Konno, Shigenori; Tanaka, Tamaki; Hamada, Y.; Katagiri, Hiroshi; Hibi, Mikiharu; Miyai, Toshiki; Hashimoto, M.; Kataoka, Keita; Tatsuta, Takeshi; Hattori, Azusa N.; Higashi, Naoto; Honda, Mitsunori; Masunaga, Norifumi; Mino, Hiroaki; Yasui, Shintaro; Nayeem, Janathul; Shimizu, Tatsuya; Takahashi, Nobuaki; Kato, Y.; Sakai, Chikako; Yoshimura, Masashi; Takeda, Shumpei; Matsui, Fumihiko; Daimon, Hiroshi

doi:10.1016/j.susc.2007.04.246

Cited by 12 publications

(9 citation statements)

References 12 publications

Supporting

Mentioning

Contrasting

Order By: Relevance

“…The chamber described above was connected to the UHV transfer system [18] and the samples could be transferred to another UHV system (e.g. the XPS chamber [19] ) without atmospheric exposure.…”

Section: Methodsmentioning

confidence: 99%

X‐ray photoelectron spectroscopy of SPE‐grown bcc‐Fe, polycrystal and β‐FeSi₂ phases on Si(111) surfaces

Hattori¹,

Hattori²,

Daimon³

2008

Surface & Interface Analysis

Self Cite

View full text Add to dashboard Cite

Ultrathin films of iron silicides were grown on Si(111) surfaces by solid phase epitaxy (SPE); iron deposition and subsequent annealing, and analyzed using in situ high energy-resolution X-ray photoelectron spectroscopy (XPS). We analyzed peaks using Lorentzian and Donaich-Šunjić curves and estimated the validity of both fittings. Under the sequence from bcc-Fe to polycrystal phase (the mixture of Fe 3 Si and β-FeSi 2 ), and then β-FeSi 2 phase with annealing process, the slight chemical shifts of Fe 2p 3/2 toward higher binding energy (BE) and the reduction of peak asymmetry for Fe 2p 3/2 and Fe 2p 1/2 were observed. We attributed this behavior to the reduction of the metallicity in iron silicide films.

show abstract

Section: Methodsmentioning

confidence: 99%

X‐ray photoelectron spectroscopy of SPE‐grown bcc‐Fe, polycrystal and β‐FeSi₂ phases on Si(111) surfaces

Hattori¹,

Hattori²,

Daimon³

2008

Surface & Interface Analysis

Self Cite

View full text Add to dashboard Cite

show abstract

“…First, the sample was dipped into RCA solution to remove contamination, and then into HF solution for hydrogen termination. After that, this sample was immediately loaded into the UHV chamber system(less than 3×10 −10 Torr) [14]. The sample degassing and flashing annealing were carried out at 400 • C and 700 • C to obtain the clean Ge(001) surface 2×1.…”

Section: Methodsmentioning

confidence: 99%

Interband interaction between bulk and surface resonance bands of a Pb-adsorbed Ge(001) surface

Sakata

Takeda

Kitagawa

et al. 2016

Semicond. Sci. Technol.

Self Cite

View full text Add to dashboard Cite

We investigate the valence band structure of Pb on Ge(001) by Angle-Resolved Photoelectron Spectroscopy. Three Ge bands, G1, G2, and G3, were observed on Ge(001) 2×1 clean surface. In addition to these three bands, a forth band (R band) is found in the 2 ML of Pb coverage. The R band continues to appear even when the surface superstructure changed. The position of the R band does not depend on Pb coverage. These results indicate that the R band derives from Ge subsurface states known as surface resonance states. Furthermore, the effective mass of G3 is significantly reduced when this forth band exists. We found that this reduction of the G3 effective mass was explained by the interaction of the G3 and the surface resonance band. Consequently, the surface resonance band penetrates the Ge subsurface region affecting the Ge bulk states. We observed the hybridization between Ge states and the surface resonance states induced by Pb adsorption.

show abstract

“…• C (≥ 1 sec) using direct heating method in UHV [12]. The temperature of these samples were raised up to 1250…”

Section: Methodsmentioning

confidence: 99%

“…The band structure of these samples were measured by ARPES with He discharge lamp (21.2 eV) in UHV [12]. After the ARPES measurement, 5 samples (flash annealed for 0, 1, 5, 100, and 300 times) were extracted to the air and loaded to SIMS chamber to measure dopant distribution.…”

Section: Methodsmentioning

confidence: 99%

Effect of the Flash Annealing on the Impurity Distribution and the Electronic Structure in the Inversion Layer

Sakata

Takeda

Ayob

et al. 2015

e-J. Surf. Sci. Nanotech.

Self Cite

View full text Add to dashboard Cite

We investigated the relationship among the number of flash annealing times to obtain Si clean surface and the change of arsenic dopant concentration and subband levels using secondary ion mass spectroscopy (SIMS) and angle-resolved photoelectron spectroscopy(ARPES). The SIMS result shows that the first five times of the flash annealing already induces significant reduction of the dopant concentration in agreement with the recent work [Pitter et al., J. Vac. Sci. Technol. B 30, 021806 (2012)]. We found the energies of hole subband levels rapidly decrease as the number of the flash annealing times increases. We calculated the subband levels in a broadened confinement potential taking the dopant reduction determined by SIMS into account. The energy separations of the calculated subband levels were in good agreement with the ARPES results.

show abstract

Total analysis of surface structure and properties by UHV transfer system

Cited by 12 publications

References 12 publications

X‐ray photoelectron spectroscopy of SPE‐grown bcc‐Fe, polycrystal and β‐FeSi₂ phases on Si(111) surfaces

X‐ray photoelectron spectroscopy of SPE‐grown bcc‐Fe, polycrystal and β‐FeSi₂ phases on Si(111) surfaces

Interband interaction between bulk and surface resonance bands of a Pb-adsorbed Ge(001) surface

Effect of the Flash Annealing on the Impurity Distribution and the Electronic Structure in the Inversion Layer

Contact Info

Product

Resources

About

Total analysis of surface structure and properties by UHV transfer system

Cited by 12 publications

References 12 publications

X‐ray photoelectron spectroscopy of SPE‐grown bcc‐Fe, polycrystal and β‐FeSi2 phases on Si(111) surfaces

X‐ray photoelectron spectroscopy of SPE‐grown bcc‐Fe, polycrystal and β‐FeSi2 phases on Si(111) surfaces

Interband interaction between bulk and surface resonance bands of a Pb-adsorbed Ge(001) surface

Effect of the Flash Annealing on the Impurity Distribution and the Electronic Structure in the Inversion Layer

Contact Info

Product

Resources

About

X‐ray photoelectron spectroscopy of SPE‐grown bcc‐Fe, polycrystal and β‐FeSi₂ phases on Si(111) surfaces

X‐ray photoelectron spectroscopy of SPE‐grown bcc‐Fe, polycrystal and β‐FeSi₂ phases on Si(111) surfaces