Epitaxial β-FeSi2 thin films were grown on Si(111)7×7 clean surfaces by solid phase epitaxy in ultrahigh vacuum: iron deposition at low temperature and subsequent annealing. We found that a ferromagnetic interface layer of iron-rich silicides forms between a β-FeSi2 surface layer and a Si(111) substrate spontaneously from transmission electron microscopy observations and magnetization measurements.
The creation of atomically-ordered Si{111}7 × 7 facet structures on a Si(110) substrate is realized for the first time. Au was deposited on atomically-flat {111} facet surfaces. The resistance of Au wires crossing over three-dimensional (3D) facet edges with an angular shape is intrinsically sensitive to the edge alignments in electric path: the resistance in crossing the facet edges was 3–10 times larger than that along the facet edges. We suggest the enlargement of the resistance originated from conduction electron scattering along the angular path. This work pioneers the fundamental understanding of electron transport in 3D angular metal-interconnects.
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