Top-Illuminated In0.52Al0.48As-Based Avalanche Photodiode With Dual Charge Layers for High-Speed and Low Dark Current Performances

High Performance of Manganese Porphyrin Sensitized p-Type CuFe2O4 Photocathode for Solar Water Splitting to Produce Hydrogen in a Tandem Photoelectrochemical Cell

“…It is obvious that the cathodic current of CuFe 2 O 4 under illumination is larger than the dark current, which is characteristic of a p-type semiconductor [37,38]. The fact that dark current of the fabricated photocathode is a bit high may be due to the existing surface states on the photocathode materials, resulting in the leakage current [39,40]. The negative slope of the Mott-Schottky curve of CuFe 2 O 4 ( Figure 3B) further proves that p-type CuFe 2 O 4 semiconductor has been successfully fabricated, and the calculated flat-band potential of CuFe 2 O 4 is 0.14 V vs. RHE, which can be approximately considered to be the valence band value for p-type semiconductors.…”

Nanoscale III-V Semiconductor Photodetectors for High-Speed Optical Communications

“…Semiconductor photodetectors have evolved from 2.5G APD to 10G APD and recently advanced to 25G APD [22,23]. Driven by 100G datacenter demand, the development and manufacturing of 25G APD have been accelerated with rapid pace and growth [24][25][26]. Comparing the charge control layer, the feature size roughly reduced from about 100 nm in 2.5G APD to 50 nm in 10G APD and continued to shrink to about 30 nm in 25G APD.…”

“…The active region is sandwiched between the P-mesa at the top and the N-mesa at the bottom. For 25G APD, more sophisticated mesa structure such as dual charge layers has been designed to improve the bandwidth-gain product [22,24]. layer, and n + -InAlAs/InP contact layers.…”

“…performances [36]. The total thickness of InGaAs absorber is 0.8 μm and the ratio of depleted versus p-doped region is chosen to balance the RC delay and internal carrier transit/avalanche-delay time under low gain operation (M G < 5) [24]. In order to shorten the avalanche delay time, a thin M-layer (around 90 nm) is chosen in our device structure [22,36].…”

“…At the reverse bias of −17 V, the bandwidth taken by the 3 dB roll-off can reach 20 GHz. Such band-width is adequate for meeting the requirement of 4 × 25G ER4 Ethernet[24]. The corresponding multiplication factor or gain at −17 V is about 2.2 (M = 2.2).…”