TOP-electrode-eliminated organic bi-stable devices and their two switching modes in different atmospheres

Qin, Jiajun; Zhang, Jiawei; Chen, Xiaoqing; Zeng, Quan; Peng, Huan; Wu, Feng; Tang, Y. J.; Hou, X. Y.

doi:10.1016/j.orgel.2015.03.024

Cited by 5 publications

(10 citation statements)

References 23 publications

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“…Similar bipolar I−V characteristics have been reported in our previous work. 10 We should point out that these bipolar switching behaviors are not so repeatable as compared with unipolar switching behaviors in our experiments.…”

Section: ■ Results and Discussionmentioning

confidence: 64%

“…This microconducting channels model have been widely observed in organic memory devices. 10,27,31 As reported, the metal ions are supposed to be the origin of high-conducting channels, through which the current density is much higher than the bulk in the ON state.…”

Section: ■ Results and Discussionmentioning

confidence: 85%

“…Therefore, bipolar switching is usually observed when the current density through bulk is reduced at reverse bias. This microconducting channels model have been widely observed in organic memory devices. ,, As reported, the metal ions are supposed to be the origin of high-conducting channels, through which the current density is much higher than the bulk in the ON state. The burnt down of these channels results in the OFF state.…”

Section: Resultsmentioning

confidence: 99%

“…Considering the electrical switching behavior where the device can be switched between a low-resistance state (ON state) and a high-resistance state (OFF state) during the current−voltage (I−V) scan, the switch ON process refers to the transition from an OFF state to an ON state, while the switch OFF process refers to the transition from the ON state to the OFF state. 10,11 Especially, according to the switch ON and switch OFF history during I−V scan, the memory devices are usually clarified into three types: unipolar switching type, 12 bipolar switching type, 13 and write-once-read-many times (WORM) switching type. 14 It should be noted that in organic−inorganic hybrid perovskite devices, the WORM switching type is usually observed when device resistance goes down instantly under certain bias and never goes up in the following scans.…”

Section: ■ Introductionmentioning

confidence: 99%

“…24 It is quite different from organic memory devices with commonly observed unipolar switching type when the conductance of the active layer was decreased. 10,11 As the promising candidate for future perovskite memory applica- tions, it is highly desirable to develop unipolar switching, which enables an easier read−write process through the samedirectional operation. Moreover, the I−V characteristics under both forward and reverse scans are usually symmetrical, which brings about more flexibility in memory programming.…”

Section: ■ Introductionmentioning

confidence: 99%

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Memory Devices via Unipolar Resistive Switching in Symmetric Organic–Inorganic Perovskite Nanoscale Heterolayers

Shen

Zhu

et al. 2020

ACS Appl. Nano Mater.

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Organic–inorganic hybrid perovskite thin films with nanostructured polycrystalline grains have shown great potential in various nanoscale optoelectrical applications. Among them, the field of electrical memory has fallen behind due to insufficient knowledge of the related resistive switching characters and mechanisms. In the present work, switching behaviors of perovskite memory devices are systematically analyzed by comparing them with organic memory devices. We found that decreasing the conductivity of a polycrystalline perovskite thin layer would lead to unipolar switching behaviors, which is supplementary to the present perovskite memory family where bipolar switching is commonly reported. Moreover, our proposed symmetrical device with a nanoscale heterolayer structure enables us not only to achieve highly reproducible unipolar switching devices but also to settle the argument whether microconducting channels exist within perovskite memory devices through characterizing the microscopic morphological homogeneity. Surprisingly, the scanning electron microscopy results show that partial 10 μm large perovskite grains would be decomposed into various 100 nm small grains under high external bias, indicating the presence of microconducting channels. Furthermore, energy-dispersive X-ray spectroscopy results together with photoluminescence results of the perovskite thin film before and after applying bias are nearly identical, demonstrating that microconducting channels are formed without any difference in compositions or optical properties. Our discoveries provide a practical strategy to achieve electrical storage via organic–inorganic hybrid perovskite thin-film devices.

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Section: ■ Results and Discussionmentioning

confidence: 64%

Section: ■ Results and Discussionmentioning

confidence: 85%