Effect of device structure on the resistive switching characteristics of organic polymers fabricated through all printed technology

Rehman, Muhammad Muqeet; Yang, Bong-Su; Yang, Young-Jin; Karimov, Khasan S.; Choi, Kyoung-Ho

doi:10.1016/j.cap.2017.01.023

Cited by 53 publications

(20 citation statements)

References 44 publications

Supporting

Mentioning

Contrasting

Order By: Relevance

“…The asymmetry of the current levels in both polarities occurs due to the different work function of two electrodes and materials [ 30 ]. The statistical distribution is one of the crucial memory parameters in memory devices.…”

Section: Resultsmentioning

confidence: 99%

Stable and Multilevel Data Storage Resistive Switching of Organic Bulk Heterojunction

et al. 2021

View full text Add to dashboard Cite

Organic nonvolatile memory devices have a vital role for the next generation of electrical memory units, due to their large scalability and low-cost fabrication techniques. Here, we show bipolar resistive switching based on an Ag/ZnO/P3HT-PCBM/ITO device in which P3HT-PCBM acts as an organic heterojunction with inorganic ZnO protective layer. The prepared memory device has consistent DC endurance (500 cycles), retention properties (104 s), high ON/OFF ratio (105), and environmental stability. The observation of bipolar resistive switching is attributed to creation and rupture of the Ag filament. In addition, our conductive bridge random access memory (CBRAM) device has adequate regulation of the current compliance leads to multilevel resistive switching of a high data density storage.

show abstract

Section: Resultsmentioning

confidence: 99%

Stable and Multilevel Data Storage Resistive Switching of Organic Bulk Heterojunction

et al. 2021

View full text Add to dashboard Cite

show abstract

“…Partially printed memristive systems were fabricated on ITO coated polymer foil or glass which served as substrate and bottom electrode and memristive layers were deposited by EHD printing [18][19][20][21][22]. A combination of EHD printing for the memristive layer and EHD or screen printing for the top electrode and reverse offset printing for the bottom electrode was used by the Choi group [23][24][25]. The dominance of EHD printing methods for fabricating memristive structures is attributed to the high patterning resolution which can be achieved with this technique and which can extent below 100 nm [26].…”

Section: State-of-the-artmentioning

confidence: 99%

Memristive devices based on mass printed organic resistive switching layers

et al. 2021

View full text Add to dashboard Cite

Resistive random-access memory is a candidate for next-generation non-volatile memory architectures. In this study, we use flexographic roll-to-roll printing technology for deposition of the resistive layer, a printing method that allows fast and cost-effective fabrication to create non-volatile resistive memory devices. Metal-free organic polymers blends composed of poly(methyl methacrylate) (PMMA) and a surplus of poly(vinyl alcohol) (PVA) serve as the active layer. Microscopic studies of the roll-to-roll printed layers show circular domains of PMMA embedded in PVA. The influence of the PMMA content in the polymer blend is investigated with respect to the performance and reliability of the resistive memory cells. Electrical characterization reveals a retention time of at least eleven days, a Roff/Ron ratio of approx. two orders and write/erase voltages of + 1/−2 V.

show abstract

“…STT-MRAM has a drawback of reliability, while PCM has a disadvantage of an extensive write latency. Therefore, an alternative of a nonvolatile memory device for the next generation has been proposed by researchers in the form of resistive random-access memory (RRAM) devices with the advantages of low power consumption, high scalability, simple structure, easy fabrication, small size, and low cost. ,,− ,,,,− Applications of RRAMs include but are not limited to aerospace, chaotic circuits, − neuromorphic computing, ,− memory devices, ,,− ,,− ,− and logical circuit displays. − RRAMs are usually fabricated as a vertical device with a functional layer of an insulator/semiconductor sandwiched between two metallic electrodes; however, it can also have a planar structure. − RRAMs can be further classified into nonvolatile and volatile memory devices on the basis of applied electric field, because nonvolatile memories can retain data even without the application of an external power supply, while volatile memories cannot retain their stored data in the absence of applied voltage. − RRAMs usually operate reversibly with...…”

Section: Introductionmentioning

confidence: 99%

“…These inorganic-semiconductor-based RRAMs exhibited remarkable memory characteristics with certain drawbacks due to the limitations of functional material including nonflexibility, nonrecyclability, and environmental unfriendliness. 128 Organic-semiconductor-based RRAMs have also been proposed to cope with the disadvantages of inorganic RRAMs such as poly(vinyl alcohol) (PVA), 49 poly(methyl methacrylate) (PMMA), 129 methylammonium lead iodide (CH 3 NH 3 PbI 3 ), 130 poly(3-hexylthiophene) (P3HT), 50 poly- (3,4-ethylenedioxythiophene):poly(styrenesulfonate) (PE-DOT:PSS), 131 naphthalimide nanoparticles, 132 and so on, but they too have certain limitations such as a low conductivity and small lifetime. 133 Different classes of materials used as the functional layers of RRAMs are illustrated in Figure 1(a).…”

Section: Introductionmentioning

confidence: 99%

Biomaterial-Based Nonvolatile Resistive Memory Devices toward Ecofriendliness and Biocompatibility

Rehman

Kim

et al. 2021

ACS Appl. Electron. Mater.

Self Cite

View full text Add to dashboard Cite

Advancement in electronic industry has revolutionized the lifestyle of mankind at the cost of leaving adverse effects on the environment due to the use of toxic and nondegradable functional materials abundantly used in various electronic devices. The use of biomaterials in electronic devices with attractive properties is by far the best solution for protecting our environment from hazardous materials without compromising the growth of the electronic industry. Biomaterials are environmentally friendly and biocompatible with the added advantages of easy processing, transparency, flexibility, abundant resources, sustainability, recyclability, and simple extraction. This Review targets the characteristics, advancements, role, limitations, and prospects of using biomaterials as the functional layer of a resistive random-access memory (RRAM) device with a primary focus on the electronic properties of bio-RRAMs. Among the available memory devices, RRAMs have a huge potential to become the nonvolatile memory of the next generation owing to their simple structure, high scalability, and low power consumption. Applications of using biomaterial-based RRAMs have also been discussed including mimicking the human brain, fabricating wearable memory devices, and implanting bio-RRAMs. The motivation behind this work is to promote the use of biomaterials in electronic devices and attract researchers toward a green solution of hazardous problems associated with the electronic industry.

show abstract

Effect of device structure on the resistive switching characteristics of organic polymers fabricated through all printed technology

Cited by 53 publications

References 44 publications

Stable and Multilevel Data Storage Resistive Switching of Organic Bulk Heterojunction

Stable and Multilevel Data Storage Resistive Switching of Organic Bulk Heterojunction

Memristive devices based on mass printed organic resistive switching layers

Biomaterial-Based Nonvolatile Resistive Memory Devices toward Ecofriendliness and Biocompatibility

Contact Info

Product

Resources

About