Titanium Oxide Thin Films Prepared by Plasma Enhanced Atomic Layer Deposition Using Remote Electron Cyclotron Resonance Plasma for Organic Devices Passivation

Kang, Byung-Woo; Kim, Woong-Sun; Hwang, Chang-Mook; Moon, Dae-Yong; Kim, Jay-Jung; Park, Jae-Gun; Park, Jong-Wan

doi:10.1143/jjap.49.08jg05

Cited by 7 publications

(6 citation statements)

References 14 publications

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“…Furthermore, plasma-assisted ALD allows for a wider choice of substrate materials to be used, particularly those which are temperature-sensitive. 35,38,39,54,65,163,187,251,252,256,258,286,320,321 D. Good control of stoichiometry and film composition Non-thermally-driven reactions can be induced at the deposition surface due to the nonequilibrium conditions in the plasma, which enables better control of the ALD surface chemistry and of the species incorporated into the film. Therefore, the use of a plasma provides additional variables with which to tune the stoichiometry and composition of the films.…”

Section: Increased Choice Of Precursors and Materialsmentioning

confidence: 99%

“…Al 2 O 3 and TiO 2 ) prepared by plasmaassisted ALD can serve as good barrier layers against H 2 O and O 2 permeation. 38,39,54,251,256 For Al 2 O 3 it was reported that the material can provide very low water vapor transmission rates for the encapsulation of organic LEDs while also significantly reducing the pinhole density. 38,39,54 The advantage of ALD processes for this application is that dense, high quality thin films can be prepared that outperform films prepared by other vapor phase deposition methods (such as PECVD and PVD) even when those layers are much thicker.…”

Section: Encapsulationmentioning

confidence: 99%

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Plasma-Assisted Atomic Layer Deposition: Basics, Opportunities, and Challenges

Profijt

Potts

Sanden

et al. 2011

Journal of Vacuum Science &Amp; Technology A: Vacuum, Surfaces, and Films

717

537

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Plasma-assisted atomic layer deposition (ALD) is an energy-enhanced method for the synthesis of ultra-thin films with Å-level resolution in which a plasma is employed during one step of the cyclic deposition process. The use of plasma species as reactants allows for more freedom in processing conditions and for a wider range of material properties compared with the conventional thermally-driven ALD method. Due to the continuous miniaturization in the microelectronics industry and the increasing relevance of ultra-thin films in many other applications, the deposition method has rapidly gained popularity in recent years, as is apparent from the increased number of articles published on the topic and plasma-assisted ALD reactors installed. To address the main differences between plasma-assisted ALD and thermal ALD, some basic aspects related to processing plasmas are presented in this review article. The plasma species and their role in the surface chemistry are addressed and different equipment configurations, including radical-enhanced ALD, direct plasma ALD, and remote plasma ALD, are described. The benefits and challenges provided by the use of a plasma step are presented and it is shown that the use of a plasma leads to a wider choice in material properties, substrate temperature, choice of precursors, and processing conditions, but that the processing can also be compromised by reduced film conformality and plasma damage. Finally, several reported emerging applications of plasma-assisted ALD are reviewed. It is expected that the merits offered by plasma-assisted ALD will further increase the interest of equipment manufacturers for developing industrial-scale deposition configurations such that the method will find its use in several manufacturing applications.

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Section: Increased Choice Of Precursors and Materialsmentioning

confidence: 99%

Section: Encapsulationmentioning

confidence: 99%

Plasma-Assisted Atomic Layer Deposition: Basics, Opportunities, and Challenges

Profijt

Potts

Sanden

et al. 2011

Journal of Vacuum Science &Amp; Technology A: Vacuum, Surfaces, and Films

717

537

View full text Add to dashboard Cite

show abstract

“…x [561,683,[735][736][737][738][739][740][741][742][743]; [384,646,744]; [384,646,651,741,[745][746][747][748][749][750][751][752][753][754][755][756][757][758][759][760][761];…”

Section: Alkoxidesunclassified

Titanium dioxide thin films by atomic layer deposition: a review

Niemelä

Marín

Karppinen

2017

Semicond. Sci. Technol.

129

116

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Within its rich phase diagram titanium dioxide is a truly multifunctional material with a property palette that has been shown to span from dielectric to transparent-conducting characteristics, in addition to the well-known catalytic properties. At the same time down-scaling of microelectronic devices has led to an explosive growth in research on atomic layer deposition (ALD) of a wide variety of frontier thin-film materials, among which TiO2 is one of the most popular ones. In this topical review we summarize the advances in research of ALD of titanium dioxide starting from the chemistries of the over 50 different deposition routes developed for TiO2 and the resultant structural characteristics of the films. We then continue with the doped ALD-TiO2 thin films from the perspective of dielectric, transparent-conductor and photocatalytic applications. Moreover, in order to cov er the lat est tr ends in t he research f ield, both the var iously constr ucted TiO2 nanostructures enabled by ALD and the Ti-based hybrid inorganic-organic films grown by the emerging ALD/MLD (combined atomic/molecular layer deposition) technique are discussed.

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“…By the aforementioned results it is concluded that, also under mild plasma conditions, ions have a strong impact on the film crystallinity and GPC during plasma ALD of TiO 2 . Since the flux and energy of ions is dependent on the plasma source design and plasma conditions employed, this strong impact of ions could (partly) explain the limited process reproducibility and large spread in GPC values reported for TiO 2 in the literature, ,− which appears to be a long-standing issue. To better control the growth of TiO 2 thin films by plasma ALD, it is therefore important to gain detailed information on the influence of ions under various conditions.…”

Section: Resultsmentioning

confidence: 99%

“…Moreover, the growth per cycle (GPC) is observed to be highly susceptible to the influence of (low-energy) ions. This can be an important factor behind the large spread in GPC values reported in the literature ,− for this process (see the Supporting Information). Therefore, detailed information on the influence of ions may be essential for improving the limited reproducibility of plasma ALD of TiO 2 in between labs and ALD tools, which appears to be a long-standing issue.…”

Section: Introductionmentioning

confidence: 98%

Impact of Ions on Film Conformality and Crystallinity during Plasma-Assisted Atomic Layer Deposition of TiO₂

et al. 2021

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This work demonstrates that ions have a strong impact on the growth per cycle (GPC) and material properties during plasma-assisted atomic layer deposition (ALD) of TiO 2 (titanium dioxide), even under mild plasma conditions with lowenergy (<20 eV) ions. Using vertical trench nanostructures and microscopic cavity structures that locally block the flux of ions, it is observed that the impact of (low-energy) ions is an important factor for the TiO 2 film conformality. Specifically, it is demonstrated that the GPC in terms of film thickness can increase by 20 to >200% under the influence of ions, which is correlated with an increase in film crystallinity and an associated strong reduction in the wet etch rate (in 30:1 buffered HF). The magnitude of the influence of ions is observed to depend on multiple parameters such as the deposition temperature, plasma exposure time, and ion energy, which may all be used to minimize or exploit this effect. For example, a relatively moderate influence of ions is observed at 200 °C when using short plasma steps and a grounded substrate, providing a low ion-energy dose of ∼1 eV nm −2 cycle −1 , while a high effect is obtained when using extended plasma exposures or substrate biasing (∼100 eV nm −2 cycle −1 ). This work on TiO 2 shows that detailed insight into the role of ions during plasma ALD is essential for precisely controlling the film conformality, material properties, and process reproducibility.

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Titanium Oxide Thin Films Prepared by Plasma Enhanced Atomic Layer Deposition Using Remote Electron Cyclotron Resonance Plasma for Organic Devices Passivation

Abstract: DU Dongsheng* ( I n s t i t u t e f o r Advanced S t u d y P r i n c e t o n , NJ e%* W U Dandi %#a ( I n s t i t u t e of High E n e r g y P h y s i c s , Academia CLEAN 0 8 5 4 0 , U.S.A. )

Cited by 7 publications

References 14 publications

Plasma-Assisted Atomic Layer Deposition: Basics, Opportunities, and Challenges

Plasma-Assisted Atomic Layer Deposition: Basics, Opportunities, and Challenges

Titanium dioxide thin films by atomic layer deposition: a review

Impact of Ions on Film Conformality and Crystallinity during Plasma-Assisted Atomic Layer Deposition of TiO₂

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Titanium Oxide Thin Films Prepared by Plasma Enhanced Atomic Layer Deposition Using Remote Electron Cyclotron Resonance Plasma for Organic Devices Passivation

Abstract: DU Dongsheng* ( I n s t i t u t e f o r Advanced S t u d y P r i n c e t o n , NJ e%* W U Dandi %#a ( I n s t i t u t e of High E n e r g y P h y s i c s , Academia CLEAN 0 8 5 4 0 , U.S.A. )

Cited by 7 publications

References 14 publications

Plasma-Assisted Atomic Layer Deposition: Basics, Opportunities, and Challenges

Plasma-Assisted Atomic Layer Deposition: Basics, Opportunities, and Challenges

Titanium dioxide thin films by atomic layer deposition: a review

Impact of Ions on Film Conformality and Crystallinity during Plasma-Assisted Atomic Layer Deposition of TiO2

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Product

Resources

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Impact of Ions on Film Conformality and Crystallinity during Plasma-Assisted Atomic Layer Deposition of TiO₂