Abstract:An ultrathin metasurface-based absorber consisting of titanium nitride (TiN) nano-disk arrays–dielectric layer-TiN substrate is proposed in this paper. The absorber exhibits near-unity absorption in the whole visible range of 380–780 nm. Our results demonstrate that the proposed metasurface-based absorber is not only independent of light polarization, but also exhibits angle-independent absorption behavior for oblique incidence up to 70[Formula: see text]. The high absorption performance of the TiN nano-disk a… Show more
“…The average absorption in the range of 200-4000 nm is 94.6%. To the best of our knowledge, this bandwidth is the largest when compared to other TiN MIM absorbers [16,17,19,21,22,24].…”
Section: Figure 2 (A) the Simulated Reflection Transmission And Absor...mentioning
confidence: 99%
“…Due to its extraordinary properties, such as compatibility with the CMOS processes, high melting point of 2930 ℃, high temperature durability and large loss in the visible range, TiN is a good candidate for the design of prefect absorbers to be used in high-temperature thermo-photovoltaic systems [16,17]. In addition, TiN possesses the property of the transition from dielectrics to metal at the wavelength of 425 nm.…”
Section: Introductionmentioning
confidence: 99%
“…By virtue of this feature, the broadband absorbers based on the TiN materials can be designed. The TiN based perfect absorbers, including square-ring aray, nanodisk array were firstly studied with high absorption limited in the visible regime [16,17]. More complicated TiN nanostructures, such as TiN 3D-truncated nanopillars and nanocones were proposed to realize broad absorption in the visible and near-infrared (NIR) regions [18,19].…”
“…The average absorption in the range of 200-4000 nm is 94.6%. To the best of our knowledge, this bandwidth is the largest when compared to other TiN MIM absorbers [16,17,19,21,22,24].…”
Section: Figure 2 (A) the Simulated Reflection Transmission And Absor...mentioning
confidence: 99%
“…Due to its extraordinary properties, such as compatibility with the CMOS processes, high melting point of 2930 ℃, high temperature durability and large loss in the visible range, TiN is a good candidate for the design of prefect absorbers to be used in high-temperature thermo-photovoltaic systems [16,17]. In addition, TiN possesses the property of the transition from dielectrics to metal at the wavelength of 425 nm.…”
Section: Introductionmentioning
confidence: 99%
“…By virtue of this feature, the broadband absorbers based on the TiN materials can be designed. The TiN based perfect absorbers, including square-ring aray, nanodisk array were firstly studied with high absorption limited in the visible regime [16,17]. More complicated TiN nanostructures, such as TiN 3D-truncated nanopillars and nanocones were proposed to realize broad absorption in the visible and near-infrared (NIR) regions [18,19].…”
“…However, the reliable stable temperatures of these absorbers are below 750 °C due to the limination of intrinsic material properties. In recent years, all-ceramic based absorbers have shown great potential for high-temperature applications, especially for absorbers with transition metal nitrides (Li et al, 2021;Meng et al, 2017;Liang et al, 2018) and their ceramic composites (Meng and Zhou 2019;Zhang et al, 2016;Cao et al, 2017) as the main absorption units realized by different optical designs and absorption mechanisms. Together with transition metal nitrides, transition metal carbides and borides also belong to the UHTCs, which are endowed with high melting temperature (≥3,000 °C), good thermal and electrical conductivity (Chen et al, 2021), and chemical inertness (Tang and Hu 2017;Fahrenholtz and Hilmas 2017).…”
Exploring the spectrally selective absorbers with high optical performance and excellent thermal stability is crucial to improve the conversion efficiency of solar energy to electricity in concentrated solar power (CSP) systems. However, there are limited reports on the selective solar absorbers utilized at 900oC or above. Herein, we developed a selective absorption coating based on the ultra-high temperature ceramic ZrC and the quasi-optical microcavity (QOM) optical structure, and experimentally achieved the absorber via depositing an all-ceramic multilayer films on a stainless steel substrate by magnetron sputtering. The prepared multi-layer selective absorber demonstrates an excellent high solar absorptance of ∼0.964 due to the multi absorptance mechanisms in the QOM, and a relatively low thermal emittance of ∼0.16 (82°C). Moreover, the coating can survive at 900oC in vacuum for 100 h with a superior spectral selectivity of 0.96/0.143 (82°C) upon annealing, resulting from the introduction of ultra-high temperature ceramic ZrC in the QOM structure. Under the conditions of a stable operating temperature of 900°C and a concentration ratio of 1,000 suns, the calculated ideal conversion efficiency using this absorber can reach around 68%, exceeding most solar selective absorbers in previous reports.
“…[20] Liang et al disigned an absorber based on titanium nitride nano-disks, which exhibits near-unity absorption in the whole visible range. [21] However, owing to the high symmetry of the cubes and disks, the generation of many resonance modes is restricted, and perfect ab-sorbers based on these high-symmetry structures can achieve the perfect absorption only in a range from visible to nearinfrared light. Therefore, the introduction of asymmetric parts into the traditional high-symmetric structures may increase resonance modes of the structures, which makes it possible to cover the whole solar absorption spectrum.…”
The broadband metamaterial perfect absorber has been extensively studied due to its excellent characteristics and promising application prospect. In this work a solar broadband metamaterial perfect absorber is proposed based on the structure of the germanium (Ge) cone array and the indium arsenide (InAs) dielectric film on the gold (Au) substrate. The results show that the absorption covers the whole ultraviolet-visible and near-infrared range. For the case of A > 99%, the absorption bandwidth reaches up to 1230 nm with a wavelength range varied from 200 nm to 1430 nm. The proposed absorber is able to absorb more than 98.7% of the solar energy in a solar spectrum from 200 nm to 3000 nm. The electromagnetic dipole resonance and the high-order modes of the Ge cone couple strongly to the incident optical field, which introduces a strong coupling with the solar radiation and produces an ultra-broadband absorption. The absorption spectrum can be feasibly manipulated via tuning the structural parameters, and the polarization insensitivity performance is particularly excellent. The proposed absorber can possess wide applications in active photoelectric effects, thermion modulators, and photoelectric detectors.
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