The broadband metamaterial perfect absorber has been extensively studied due to its excellent characteristics and promising application prospect. In this work a solar broadband metamaterial perfect absorber is proposed based on the structure of the germanium (Ge) cone array and the indium arsenide (InAs) dielectric film on the gold (Au) substrate. The results show that the absorption covers the whole ultraviolet-visible and near-infrared range. For the case of A > 99%, the absorption bandwidth reaches up to 1230 nm with a wavelength range varied from 200 nm to 1430 nm. The proposed absorber is able to absorb more than 98.7% of the solar energy in a solar spectrum from 200 nm to 3000 nm. The electromagnetic dipole resonance and the high-order modes of the Ge cone couple strongly to the incident optical field, which introduces a strong coupling with the solar radiation and produces an ultra-broadband absorption. The absorption spectrum can be feasibly manipulated via tuning the structural parameters, and the polarization insensitivity performance is particularly excellent. The proposed absorber can possess wide applications in active photoelectric effects, thermion modulators, and photoelectric detectors.
Due to attractive material properties, thin film lithium niobate (TFLN) has emerged as a promising platform for advanced photonic functions such as high-speed electro-optical modulation, nonlinear frequency conversion, and frequency comb generation. The inevitable problems for the practical above-mentioned applications are the large coupling loss between the fiber and the TFLN waveguide and difficulty in achieving broadband coupling, especially covering the near-visible to near-infrared. Here, we theoretically propose a low-loss and ultrabroadband edge coupler with a six-layer structure. For transverse electric (TE) polarized light, the proposed coupler can achieve 0.62 dB, 0.38 dB, and 0.47 dB per facet at three common communication bands, 845 nm, 1310 nm, and 1550 nm, respectively. From 1200 nm to 2000 nm, the coupling loss is less than 1 dB/facet. Moreover, in the near-visible to near-infrared region ranging from 845 nm to 2000 nm, the coupling loss is lower than 2 dB/facet. The proposed coupler can avoid expensive electron beam lithography. Instead, it can be fabricated by i-line ultraviolet lithography, which is cost-effective and adaptable to wafer-scale fabrication. Also, simulated fabrication tolerances demonstrate the strong robustness of the proposed coupler. Our results pave a way towards practical TFLN photonic devices connected with optical fibers.
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