Titanium-doped indium oxide films prepared by d.c. magnetron sputtering using ceramic target

Abe, Yoshiyuki; Ishiyama, Noriko

doi:10.1007/s10853-006-0844-7

Cited by 39 publications

(23 citation statements)

References 9 publications

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“…From the previous discussion, the enhancemento ft he photoelectrochemical response upon doping cannot be explained solely by an increase in N A .I ts eems that there is also ac ontribution that comesf rom ah igherh ole mobility.T he increaseo f m with the dopantc oncentration was reported forI n 2 O 3 with severalm etal dopants (such as W, Mo, and Ti) [55][56][57] and for the perovskite SrTiO 3 doped with La, [58] which was linked to lattice distortion triggered by doping. Severalr eports pointedo ut www.chemsuschem.org av ariation of the unit cell parameters of the LaFeO 3 perovskite structure with the introduction of divalent Zn and Mg ions.…”

Section: Photoelectrochemical Characterizationmentioning

confidence: 98%

Metal Doping to Enhance the Photoelectrochemical Behavior of LaFeO₃ Photocathodes

Díez‐García

Gómez

2017

ChemSusChem

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The development of tandem devices for water photosplitting requires the preparation of photocathodic materials based on earth-abundant elements that show long-term stability in aqueous electrolytes. Ternary metal oxides seem to be a viable option, among which perovskites stand out. In this context, transparent and compact LaFeO thin-film electrodes have been prepared by a sol-gel process, both undoped and doped with metals (M) such as Mg or Zn. Pristine electrodes support the development of cathodic photocurrents in 0.1 m NaOH aqueous solutions, particularly in the presence of oxygen, with an onset potential as high as 1.4 V versus the reversible hydrogen electrode. Doping with Mg or Zn leads to an important enhancement of the photocurrent, which peaks for a stoichiometry of LaFe M O with a sixfold enhancement with respect to the pristine material. Such an improvement is attributed to an increase in both the density and mobility of the majority carriers, although a contribution of surface passivation cannot be excluded.

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Section: Photoelectrochemical Characterizationmentioning

confidence: 98%

Metal Doping to Enhance the Photoelectrochemical Behavior of LaFeO₃ Photocathodes

Díez‐García

Gómez

2017

ChemSusChem

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“…Therefore, the electrical and optical properties of ITiO thin film should be studied in order to investigate the possible application of the film as a transparent conducting electrode for DSCs and other electrooptical devices. However, only a few papers on the growth of the ITiO thin film were studied systematically and published [3][4][5].…”

Section: Introductionmentioning

confidence: 99%

The Effects of RF Sputtering Power and Gas Pressure on Structural and Electrical Properties of ITiO Thin Film

Chaoumead

Sung

Kwak

2012

Advances in Condensed Matter Physics

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Transparent conductive titanium-doped indium oxide (ITiO) films were deposited on corning glass substrates by RF magnetron sputtering method. The effects of RF sputtering power and Ar gas pressure on the structural and electrical properties of the films were investigated experimentally, using a 2.5 wt% TiO2-doped In2O3target. The deposition rate was in the range of around20~60 nm/min under the experimental conditions of5~20 mTorr of gas pressure and220~350 W of RF power. The lowest volume resistivity of1.2×10−4 Ω-cm and the average optical transmittance of 75% were obtained for the ITiO film, prepared at RF power of 300 W and Ar gas pressure of 15 mTorr. This volume resistivity of1.2×10−4 Ω-cm is low enough as a transparent conducting layer in various electrooptical devices, and it is comparable with that of ITO or ZnO:Al conducting layer.

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“…Those values are in agreement with those already reported for films prepared by several techniques. Typical resistivities in the 10 −4 Ω cm range have been obtained by Gupta et al 6 for film deposited by PLD from 5 wt.% Ti targets; Sung and Han 7 have reported a resistivity of 1.4 × 10 −3 Ω cm for films prepared by magnetic null discharge sputtering using a target sintered with 90 wt.% In 2 O 3 and 10 wt.% TiO 2 concentration and, on the other hand, van Hest et al 4 and Abe and Ishiyama 12 have given an account of a minimum of the resistivity depending on the actual film Ti content, being ∼1 × 10 −4 Ω cm for films with 3 at.% Ti content. Regarding the limit of resistivity pointed out by Bellingham et al 13, it should be noted that in the hypothesis that a carrier concentration of 2.1 × 10 −27 m −3 is obtained by the whole In 3+ substitution by Ti 4+ in the Ti(6.6%):In 2 O 3 sample, resistivity values show excellent results.…”

Section: Resultsmentioning

confidence: 85%

Optical and transport properties of Ti‐doped In₂O₃ thin films prepared by electron beam physical vapour deposition

Sánchez-Marcos

Ochando

Galindo

et al. 2010

Physica Status Solidi (a)

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Ti-doped In 2 O 3 (ITiO) thin films have been prepared by electron beam physical vapour deposition (EB-PVD). Their optical and electrical properties are studied for the obtained compositions. After oxygen annealing all samples show excellent optical transparence; additionally, maximum values for conductivity are obtained for samples with titanium contents near 6 at.%, with typical resistivity values of 4 Â 10 À5 V cm. Finally, the band-gap energy evolution is studied for the set of samples.

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Titanium-doped indium oxide films prepared by d.c. magnetron sputtering using ceramic target

Cited by 39 publications

References 9 publications

Metal Doping to Enhance the Photoelectrochemical Behavior of LaFeO₃ Photocathodes

Metal Doping to Enhance the Photoelectrochemical Behavior of LaFeO₃ Photocathodes

The Effects of RF Sputtering Power and Gas Pressure on Structural and Electrical Properties of ITiO Thin Film

Optical and transport properties of Ti‐doped In₂O₃ thin films prepared by electron beam physical vapour deposition

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Titanium-doped indium oxide films prepared by d.c. magnetron sputtering using ceramic target

Cited by 39 publications

References 9 publications

Metal Doping to Enhance the Photoelectrochemical Behavior of LaFeO3 Photocathodes

Metal Doping to Enhance the Photoelectrochemical Behavior of LaFeO3 Photocathodes

The Effects of RF Sputtering Power and Gas Pressure on Structural and Electrical Properties of ITiO Thin Film

Optical and transport properties of Ti‐doped In2O3 thin films prepared by electron beam physical vapour deposition

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Product

Resources

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Metal Doping to Enhance the Photoelectrochemical Behavior of LaFeO₃ Photocathodes

Metal Doping to Enhance the Photoelectrochemical Behavior of LaFeO₃ Photocathodes

Optical and transport properties of Ti‐doped In₂O₃ thin films prepared by electron beam physical vapour deposition