The Effects of RF Sputtering Power and Gas Pressure on Structural and Electrical Properties of ITiO Thin Film

Abstract

Transparent conductive titanium-doped indium oxide (ITiO) films were deposited on corning glass substrates by RF magnetron sputtering method. The effects of RF sputtering power and Ar gas pressure on the structural and electrical properties of the films were investigated experimentally, using a 2.5 wt% TiO2-doped In2O3target. The deposition rate was in the range of around20~60 nm/min under the experimental conditions of5~20 mTorr of gas pressure and220~350 W of RF power. The lowest volume resistivity of1.2×10−4 Ω-cm and the average optical transmittance of 75% were obtained for the ITiO film, prepared at RF power of 300 W and Ar gas pressure of 15 mTorr. This volume resistivity of1.2×10−4 Ω-cm is low enough as a transparent conducting layer in various electrooptical devices, and it is comparable with that of ITO or ZnO:Al conducting layer.

Effect of Sputtering Power on Optical Properties of Nickel Oxide Electrochromic Thin Films

“…According to the XRD results, it was found that the XRD peaks become gradually sharper, as the DC power increases from 50 to 150 W, indicating a larger particle size and the better crystallinity of the deposited films. The energy of the sputtered atom arriving at the substrate increases with the sputtering power to 150 W and facilitates a further crystallization [13]. The XRD pattern revealed that NiO films deposited at DC powers of 100 and 150 W exhibit the polycrystallinity with a standard face-centered cubic structure which matching well with the JCPDS card No.…”

Influence of Sputtering Power on the Structure and Electrical Properties of Bi2Fe4O9 Thin Films

“…As the sputtering power increases, the crystallinity of the films increases and the crystalline size becomes larger. That is, the increase in sputtering power promotes the growth of crystalline and induces an improvement in crystallinity of the film [34]. The surface diffusion of these sputtered films adatom is then enhanced by higher sputtering power.…”

Nanostructured V2O5 thin films deposited at low sputtering power

“…The reason for the decrease in the resistivity of the films was attributed to the high density film with larger grain size with less grain boundary scattering as a result of the increase in the sputtering power. The decrease in the grain boundary scattering was attributed to the increase in hall mobility by means of reduction in scattering centers or limited scattering at the grain boundaries [24].…”