Titanium disilicide on silicon by interdiffusion of titanium and amorphous silicon multilayers: transmission electron microscopy, spectroscopic ellipsometry and resistivity measurements

Nassiopoulos, A. G.; Tambouris, D.; Frangis, N.; Logothetidis, S.; Georga, S. N.; Krontiras, C. A.; Xanthopoulos, N.

doi:10.1016/0040-6090(94)90474-x

Cited by 5 publications

(1 citation statement)

References 20 publications

Supporting

Mentioning

Contrasting

Order By: Relevance

“…1) in higher forward bias is equal to 1700 Q, very large compared with the low resistivity substrate used. Both arguments suggest that there is an interfacial layer in this case which is also seen in cross sectional transmission electron microscopy pictures (XTEM) [4,5]. Hence, there was no reason for diodes preparation on n-type samples.…”

Section: Room Temperature Measurementsmentioning

confidence: 71%

Room and low temperature electrical measurements for the interface characterization of titanium disilicides on silicon from multilayer titanium/silicon structures

1994

View full text Add to dashboard Cite

The interface of titanium disilicides TiSi2 on silicon formed by electron gun evaporation of silicon/titanium multilayers and subsequent annealing is characterised using current-voltage measurements on specially prepared Schottky diodes in the whole temperature range from room temperature down to 77K. In particular, the influence of the bilayer SiITi thickness ratio, ranging between 2 and 3, on the barrier height of the diodes is studied and compared with the case of a diode formed by deposition of a single titanium layer and further annealing. The activation energies derived from the low temperature measurements have shown that the interface of the sample prepared with single layer deposition is more rough than the case of the sample prepared with deposition of multilayers using a bilayer thickness ratio Si/Ti=2.5 which is close to the calculated value for the stoichiometric films.

show abstract

Section: Room Temperature Measurementsmentioning

confidence: 71%