Room and low temperature electrical measurements for the interface characterization of titanium disilicides on silicon from multilayer titanium/silicon structures
Abstract:The interface of titanium disilicides TiSi2 on silicon formed by electron gun evaporation of silicon/titanium multilayers and subsequent annealing is characterised using current-voltage measurements on specially prepared Schottky diodes in the whole temperature range from room temperature down to 77K. In particular, the influence of the bilayer SiITi thickness ratio, ranging between 2 and 3, on the barrier height of the diodes is studied and compared with the case of a diode formed by deposition of a single ti… Show more
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