Erbium silicide films on (100) silicon, grown in high vacuum. Fabrication and properties

Kaltsas, G.; Travlos, A.; Salamouras, N; Nassiopoulos, A. G.; Revva, P.; Traverse, A.

doi:10.1016/0040-6090(95)07026-5

Cited by 15 publications

(1 citation statement)

References 9 publications

Supporting

Mentioning

Contrasting

Order By: Relevance

“…The silicidation processes for the samples (A) and (C) were carried out in N 2 ambient, while the Si-surface and silicide metal were exposed to clean room air during the silicidation process for the sample (B). In comparison to (B), (A) and (C) show superior characteristics, such as a high SBH for holes, n values closer to the ideal, and a lower reverse current compared with other reports using ErSi x (15)(16)(17). Figures 8a and 8b show the J/T 2 -1000/T characteristics for the SBDs with ErSi x and Pd 2 Si, respectively.…”

Section: Resultsmentioning

confidence: 77%

Impact of Work Function Optimized S/D Silicide Contact for High Current Drivability CMOS

Nakao¹,

Kuroda²,

Tanaka³

et al. 2010

ECS Trans.

View full text Add to dashboard Cite

A formation process of the silicide/Si contact with low contact resistance in the source/drain (S/D) regions has been developed in order to reduce the S/D electrode series resistance of MOSFETs. Er that has a low Schottky barrier height (SBH) for electrons and Pd that has a low SBH for holes were selected to n + -and p + -Si, respectively. The silicide formation processes were carried out in N 2 ambient from the Si-surface cleaning before the metal depositions to the silicidation anneal in order not to expose metal and Si region so as to prevent the oxidation. A W capping layer was formed on the Er-surface to prevent it from oxidation, since it is very easily oxidized because of its low work function. These silicides were applied to Metal-Oxide-Semiconductor Field Effect Transistors (MOSFETs), which improved the current drivability of n-and p-MOSFET due to the reduction of the S/D electrodes series resistance.

show abstract

Section: Resultsmentioning

confidence: 77%

Impact of Work Function Optimized S/D Silicide Contact for High Current Drivability CMOS

Nakao¹,

Kuroda²,

Tanaka³

et al. 2010

ECS Trans.

View full text Add to dashboard Cite

show abstract

Magnetic Binary Silicide Nanostructures

2018

View full text Add to dashboard Cite

In spite of numerous advantageous properties of silicides, magnetic properties are not among them. Here, the magnetic properties of epitaxial binary silicide nanostructures are discussed. The vast majority of binary transition-metal silicides lack ferromagnetic order in their bulk-size crystals. Silicides based on rare-earth metals are usually weak ferromagnets or antiferromagnets, yet both groups tend to exhibit increased magnetic ordering in low-dimensional nanostructures, in particular at low temperatures. The origin of this surprising phenomenon lies in undercoordinated atoms at the nanostructure extremities, such as 2D (surfaces/interfaces), 1D (edges), and 0D (corners) boundaries. Uncompensated superspins of edge atoms increase the nanostructure magnetic shape anisotropy to the extent where it prevails over its magnetocrystalline counterpart, thus providing a plausible route toward the design of a magnetic response from nanostructure arrays in Si-based devices, such as bit-patterned magnetic recording media and spin injectors.

show abstract

New Erbium Silicide Superstructures: A Study by High Resolution Electron Microscopy

Frangis

Tendeloo

Landuyt

et al. 1996

Phys. Stat. Sol. (a)

Self Cite

View full text Add to dashboard Cite

Erbium silicide thin films are grown on Si(100) substrates under high vacuum by single deposition of Er or co‐deposition of Er and Si, followed by annealing. Electron microscopy revealed for both preparations the existence of at least three new types of structural phases of erbium silicide. One has a tetragonal ThSi2 type structure; the other two are orthorhombic superstructures of the first one resulting from ordering of vacancies on the Si sublattice, which leads to a composition of ErSi2−x (0 < x < 0.5).

show abstract

Erbium silicide films on (100) silicon, grown in high vacuum. Fabrication and properties

Cited by 15 publications

References 9 publications

Impact of Work Function Optimized S/D Silicide Contact for High Current Drivability CMOS

Impact of Work Function Optimized S/D Silicide Contact for High Current Drivability CMOS

Magnetic Binary Silicide Nanostructures

New Erbium Silicide Superstructures: A Study by High Resolution Electron Microscopy

Contact Info

Product

Resources

About