Titanium dioxide (TiO<sub>2</sub>)-based gate insulators

Campbell, Stephen A.; Kim, H.-S.; Gilmer, D. C.; He, B.; Ma, Tingxuan; Gladfelter, Wayne L.

doi:10.1147/rd.433.0383

Cited by 250 publications

(157 citation statements)

References 15 publications

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“…PVD methods such as thermal evaporation and sputtering involve atom by atom, molecule by molecule growth, or ion deposition on various materials in a vacuum system [21][22][23]. CVD and sol-gel methods are less expensive than PVD [24,25]. The heat-treatment of thin films in these methods is generally important for the formation of crystallized metal oxides.…”

Section: Solution-based Thin Film Formationmentioning

confidence: 99%

Heat Treatment in Molecular Precursor Method for Fabricating Metal Oxide Thin Films

Nagai¹,

Sato²

2012

Heat Treatment - Conventional and Novel Applications

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Section: Solution-based Thin Film Formationmentioning

confidence: 99%

Heat Treatment in Molecular Precursor Method for Fabricating Metal Oxide Thin Films

Nagai¹,

Sato²

2012

Heat Treatment - Conventional and Novel Applications

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“…The newest possible application of TiO 2 is connected with miniaturization of electronics devices. Ultrathin titanium oxide films might be the gate material for replacing SiO 2 in MOSFET devices [60]. TiO 2 films doped with Co become ferromagnetic at room temperature.…”

Section: Introductionmentioning

confidence: 99%

Adsorption of selected ions on the anatase TiO₂(101) surface: a density-functional study

Bruska

Szaciłowski

Piechota

2009

Molecular Simulation

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“…Various techniques are used to grow TiO 2 , e.g. plasma oxidation [8], plasma-enhanced chemical vapour deposition (PECVD) [9], direct electron-beam evaporation [10] and metal organic chemical vapour deposition (MOCVD) [11]. The metal oxide semiconductor (MOS) capacitor structure is of fundamental importance for device application of TiO 2 thin films grown on Si substrates.…”

Section: Introductionmentioning

confidence: 99%

The structural and electrical properties of thermally grown TiO₂thin films

Chong

Mallik

Groot

et al. 2005

J. Phys.: Condens. Matter

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We studied the structural and electrical properties of TiO 2 thin films grown by thermal oxidation of e-beam evaporated Ti layers on Si substrates. Time of flight secondary ion mass spectroscopy (TOF-SIMS) was used to analyse the interfacial and chemical composition of the TiO 2 thin films. Metal oxide semiconductor (MOS) capacitors with Pt or Al as the top electrode were fabricated to analyse electrical properties of the TiO 2 thin films. We show that the reactivity of the Al top contact affects electrical properties of the oxide layers. The current transport mechanism in the TiO 2 thin films is shown to be Poole-Frenkel (P-F) emission at room temperature. At 84 K, FowlerNordheim (F-N) tunnelling and trap-assisted tunnelling are observed. By comparing the electrical characteristics of thermally grown TiO 2 thin films with the properties of those grown by other techniques reported in the literature, we suggest that, irrespective of the deposition technique, annealing of as-deposited TiO 2 in O 2 is a similar process to thermal oxidation of Ti thin films.

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Titanium dioxide (TiO₂)-based gate insulators

Cited by 250 publications

References 15 publications

Heat Treatment in Molecular Precursor Method for Fabricating Metal Oxide Thin Films

Heat Treatment in Molecular Precursor Method for Fabricating Metal Oxide Thin Films

Adsorption of selected ions on the anatase TiO₂(101) surface: a density-functional study

The structural and electrical properties of thermally grown TiO₂thin films

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Titanium dioxide (TiO2)-based gate insulators

Cited by 250 publications

References 15 publications

Heat Treatment in Molecular Precursor Method for Fabricating Metal Oxide Thin Films

Heat Treatment in Molecular Precursor Method for Fabricating Metal Oxide Thin Films

Adsorption of selected ions on the anatase TiO2(101) surface: a density-functional study

The structural and electrical properties of thermally grown TiO2thin films

Contact Info

Product

Resources

About

Titanium dioxide (TiO₂)-based gate insulators

Adsorption of selected ions on the anatase TiO₂(101) surface: a density-functional study

The structural and electrical properties of thermally grown TiO₂thin films