Tip Avalanche Photodiode—A New Generation Silicon Photomultiplier Based on Non-Planar Technology

Engelmann, Eugen; Schmailzl, Wolfgang; Iskra, P.; Wiest, F.; Popova, E.; Vinogradov, Sergey

doi:10.1109/jsen.2020.3041556

Cited by 15 publications

(21 citation statements)

References 30 publications

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“…They had to customize, i. e. to modify, the fabrication process to use a shallow ntype implant at the silicon surface between cathode and anode to redistribute the electric field just below the silicon/silicon dioxide interface at the surface of the device. A silicon photomultiplier (SiPM) used also a SPAD exploiting the fieldline crowding effect [16]. But transistors cannot be fabricated in the special SiPM detector process.…”

Section: Introductionmentioning

confidence: 99%

CMOS Integrated 32 A/W and 1.6 GHz Avalanche Photodiode Based on Electric Field-Line Crowding

Poushi

Goll

Schneider-Hornstein

et al. 2022

IEEE Photon. Technol. Lett.

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This paper presents a new Si CMOS linear-mode avalanche photodiode (APD) based on an electric field distribution formed by field-line crowding. In this structure, a spherical avalanching electric field is enforced by field-line crowding due to the curvature of the half-sphere cathode (n-well). The electric field extends radially and, therefore, the entire lowdoped epitaxial layer serves as charge collection zone. This APD can provide high responsivity and bandwidth due to its thick absorption zone and drift-based carrier transport. Measurements using a 675 nm laser source at 200 nW optical power show a maximum bandwidth of 1.6 GHz while the responsivity is 32 A/W. In addition, a maximum responsivity of 3.05×10 3 A/W at 5 nW optical power is achieved. Due to the high avalanche gain, large bandwidth, and CMOS compatibility without any process modification, this APD is a promising optical detector for many applications.Index Terms-Avalanche photodiode (APD), field-line crowding, CMOS integrated photodetector, spherical avalanching field.

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Section: Introductionmentioning

confidence: 99%

CMOS Integrated 32 A/W and 1.6 GHz Avalanche Photodiode Based on Electric Field-Line Crowding

Poushi

Goll

Schneider-Hornstein

et al. 2022

IEEE Photon. Technol. Lett.

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“…It should be noted that a SiPM was recently presented by Engelmann et al that also employs the field-line crowding effect to achieve similar advantages [22]. Unlike this device, the SPAD of this work is fabricated with a simple planar processing technology, is intended for active SPAD array integration, can be easily operated with CMOS electronics, and is backside illuminated.…”

Section: Discussionmentioning

confidence: 99%

“…Table 1 outlines the performance of the presented BSI device and other silicon SPADs that employ charge focusing [9,12,21] or that have a high NIR sensitivity [10,11]. Only SPADs are considered that are fabricated with a planar technology and that are intended for active array integration (unlike 2020 [12] 2020 [21] 2021 [10] 2020 [11] Technology some SiPMs [22]). The present work compares favorably to the other publications.…”

Section: Discussionmentioning

confidence: 99%

“…The field is peaked at radius r n and decays at a rate of r −2 . Unlike other works that exploit field-line crowding [22], the device is fabricated in a planar technology. Following equation 1, a smaller cathode radius results in a sharper field peak.…”

Section: Spad Devicementioning

confidence: 99%

“…A near-unity fill factor can be achieved irrespective of the detector pitch. Charge focusing functionality has also recently been demonstrated in the domain of silicon photomultipliers (SiPMs) [22].…”

Section: Introductionmentioning

confidence: 99%

See 2 more Smart Citations

A Backside-Illuminated Charge-Focusing Silicon SPAD with Enhanced Near-Infrared Sensitivity

Van Sieleghem,

Karve,

De Munck

et al. 2022

Preprint

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A backside-illuminated (BSI) near-infrared enhanced silicon single-photon avalanche diode (SPAD) for time-of-flight (ToF) light detection and ranging applications is presented. The detector contains a 2 µm wide multiplication region with a spherically-uniform electric field peak enforced by field-line crowding. A charge-focusing electric field extends into a 10 µm deep absorption volume, whereby electrons generated in all corners of the device can move efficiently towards the multiplication region. The SPAD is integrated with a customized 130 nm CMOS technology and a dedicated BSI process. The device has a pitch of 15 µm, which has the potential to be scaled down without significant performance loss. Furthermore, the detector achieves a photon detection efficiency of 27% at 905 nm, with an excess bias of 3.5 V that is controlled by integrated CMOS electronics, and a timing resolution of 240 ps. By virtue of these features, the device architecture is well-suited for large format ToF imaging arrays with integrated electronics.

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Optical Detection of Corona Discharge Based on SiPM at DC Voltage

Kang,

Chen,

Baheyi

et al. 2024

Lecture Notes in Electrical Engineering

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Tip Avalanche Photodiode—A New Generation Silicon Photomultiplier Based on Non-Planar Technology

Cited by 15 publications

References 30 publications

CMOS Integrated 32 A/W and 1.6 GHz Avalanche Photodiode Based on Electric Field-Line Crowding

CMOS Integrated 32 A/W and 1.6 GHz Avalanche Photodiode Based on Electric Field-Line Crowding

A Backside-Illuminated Charge-Focusing Silicon SPAD with Enhanced Near-Infrared Sensitivity

Optical Detection of Corona Discharge Based on SiPM at DC Voltage

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