A Backside-Illuminated Charge-Focusing Silicon SPAD with Enhanced Near-Infrared Sensitivity
Edward Van Sieleghem,
Gauri Karve,
Koen De Munck
et al.
Abstract:A backside-illuminated (BSI) near-infrared enhanced silicon single-photon avalanche diode (SPAD) for time-of-flight (ToF) light detection and ranging applications is presented. The detector contains a 2 µm wide multiplication region with a spherically-uniform electric field peak enforced by field-line crowding. A charge-focusing electric field extends into a 10 µm deep absorption volume, whereby electrons generated in all corners of the device can move efficiently towards the multiplication region. The SPAD is… Show more
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