TiO2 thin films by chemical vapour deposition: control of the deposition process and film characterisation

Chen, Zhongxin; Derking, Anke

doi:10.1039/jm9930301137

Cited by 21 publications

(15 citation statements)

References 11 publications

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“…The calculated value of the apparent activation energy ( E a ) is 120 ± 5 kJ/mol. This result is consistent with those of Chen et al and Taylor et al . Further increase of the deposition temperature from 400 to 500 °С causes enhancement of mass growth rate up to 0.60 ± 0.05 µg/(cm 2 min).…”

Section: Resultssupporting

confidence: 93%

Evolution of the microstructure in titanium dioxide films during chemical vapor deposition

Baryshnikova

Filatov

Mishin

et al. 2015

Phys. Status Solidi A

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Chemical vapor deposition (CVD) provides fabrication of high purity conformal layers of titanium dioxide with different structure for various applications. In this work CVD of titania layers from titanium tetraisopropoxide (TTIP) and oxygen at 1 kPa and in the substrate temperature range Ts = 300–500 °C was studied. It was found that growth of TiO2 is a non‐stationary process. Two periods of time characterized by different deposition rates were observed. Formation of amorphous TiO2 occurs at the initial period of the deposition process whereas polycrystalline titania with anatase crystal structure is deposited at the second period. Substrate temperature determines degree of crystallinity, texture, and microstructure of the deposited titania layers.

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Section: Resultssupporting

confidence: 93%

Evolution of the microstructure in titanium dioxide films during chemical vapor deposition

Baryshnikova

Filatov

Mishin

et al. 2015

Phys. Status Solidi A

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“…Figure 2 demonstrates the onset of the decomposition of the titanium precursor at about 250 C. This is in accordance with an infrared spectroscopy (IR) gas phase study where the spectra were reported to remain unaltered in the temperature range 50±250 C. [37] An earlier CVD study revealed that at 325 C the decomposition rate of Ti(OCH(CH 3 ) 2 ) 4 was slow but observable, while between 325 C and 400 C it increased rapidly. [38] The decomposition mechanism of Ti(OCH(CH 3 ) 2 ) 4 has previously been examined in relation to CVD studies carried out either with just an inert carrier gas or with added oxygen. Oxygen lowered the temperature of the thermal decomposition of the titanium precursor.…”

Section: Resultsmentioning

confidence: 99%

Reaction Mechanism Studies on Titanium Isopropoxide–Water Atomic Layer Deposition Process

Rahtu¹,

Ritala²

2002

Chem. Vap. Deposition

131

137

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Reaction mechanisms between titanium isopropoxide and deuterated water in the atomic layer deposition (ALD) of TiO 2 at 150±350 C were studied using a quartz crystal microbalance (QCM) and a quadrupole mass spectrometer (QMS). The temperature had no marked effect on the total amount of the main gaseous by-product (CH 3 ) 2 CHOD. At 150±250 C, about half of the ligands were released in reactions with surface hydroxyl groups during the Ti(OCH(CH 3 ) 2 ) 4 pulse, and the other half during the water pulse. At higher temperatures, Ti(OCH(CH 3 ) 2 ) 4 began to thermally decompose, thus affecting the growth mechanism. The results were compared with earlier CVD and ALD studies.

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“…The metal alkoxide precursor titanium tetraisopropoxide (Ti(O i Pr) 4 , TTIP) is a promising candidate to produce titanium oxide nanostructures. While TTIP is a well-known precursor in chemical vapor deposition (CVD) for the direct generation of titanium dioxide films [23,24] and particles [25,26], the use of it in EBID is rare [13][14][15]. Hoffmann et al demonstrated the fabrication of high refractive index materials for photonic bandgap structures [13] and Mitchell and Hu reported on the generation of μm-scaled, titanium and oxygencontaining area deposits on gallium arsenide [14,15].…”

Section: Introductionmentioning

confidence: 99%

Fabrication of layered nanostructures by successive electron beam induced deposition with two precursors: protective capping of metallic iron structures

Schirmer¹,

Mm²,

Papp³

et al. 2011

Nanotechnology

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We report on the stepwise generation of layered nanostructures via electron beam induced deposition (EBID) using organometallic precursor molecules in ultra-high vacuum (UHV). In a first step a metallic iron line structure was produced using iron pentacarbonyl; in a second step this nanostructure was then locally capped with a 2-3 nm thin titanium oxide-containing film fabricated from titanium tetraisopropoxide. The chemical composition of the deposited layers was analyzed by spatially resolved Auger electron spectroscopy. With spatially resolved x-ray absorption spectroscopy at the Fe L₃ edge, it was demonstrated that the thin capping layer prevents the iron structure from oxidation upon exposure to air.

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TiO2 thin films by chemical vapour deposition: control of the deposition process and film characterisation

Cited by 21 publications

References 11 publications

Evolution of the microstructure in titanium dioxide films during chemical vapor deposition

Evolution of the microstructure in titanium dioxide films during chemical vapor deposition

Reaction Mechanism Studies on Titanium Isopropoxide–Water Atomic Layer Deposition Process

Fabrication of layered nanostructures by successive electron beam induced deposition with two precursors: protective capping of metallic iron structures

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