Tin oxide and indium oxide nanowire transport characteristics: influence of oxygen concentration during synthesis

Lim, Taekyung; Lee, Sumi; Meyyappan, M.; Ju, Sanghyun

doi:10.1088/0268-1242/27/3/035018

Cited by 11 publications

(8 citation statements)

References 38 publications

(47 reference statements)

Supporting

Mentioning

Contrasting

Order By: Relevance

“…The Sb vacancy may derive from the surface defects, as reported in our previous work [25]. Additionally, other semiconductor-related studies described the vacancy-induced n-type conductivity in 1D nanoscale [26,27]. The inset revealed the SEM image of the single InSb nanowire connected to Cu electrodes.…”

Section: Resultssupporting

confidence: 52%

High sensitivity of middle-wavelength infrared photodetectors based on an individual InSb nanowire

Kuo

Lin

et al. 2013

Nanoscale Res Lett

View full text Add to dashboard Cite

Single-crystal indium antimony (InSb) nanowire was fabricated into middle-infrared photodetectors based on a metal–semiconductor-metal (M-S-M) structure. The InSb nanowires were synthesized using an electrochemical method at room temperature. The characteristics of the FET reveal an electron concentration of 3.6 × 1017 cm−3 and an electron mobility of 215.25 cm2 V−1 s−1. The photodetectors exhibit good photoconductive performance, excellent stability, reproducibility, superior responsivity (8.4 × 104 A W−1), and quantum efficiency (1.96 × 106%). These superior properties are attributed to the high surface-to-volume ratio and single-crystal 1D nanostructure of photodetectors that significantly reduce the scattering, trapping, and the transit time between the electrodes during the transport process. Furthermore, the M-S-M structure can effectively enhance space charge effect by the formation of the Schottky contacts, which significantly assists with the electron injection and photocurrent gain.

show abstract

Section: Resultssupporting

confidence: 52%

High sensitivity of middle-wavelength infrared photodetectors based on an individual InSb nanowire

Kuo

Lin

et al. 2013

Nanoscale Res Lett

View full text Add to dashboard Cite

show abstract

“…The extreme case of lack of oxygen during growth will not result in any ZnO NW growth whatsoever. Similar effects have been reported in In 2 O 3 system as well where nanowire formation, though random, occurs only for an oxygen ratio of less than 0.2% in argon and transitions to nanoflakes or thin films at higher oxygen fractions [28,29].…”

Section: Resultssupporting

confidence: 81%

Vertical ZnO nanowire growth on metal substrates

Ngo-Duc

Singh²,

Meyyappan³

et al. 2012

Nanotechnology

View full text Add to dashboard Cite

Vertical growth of ZnO nanowires is usually achieved on lattice-matched substrates such as ZnO or sapphire using various vapor transport techniques. Accomplishing this on silicon substrates requires thick ZnO buffer layers. Here we demonstrate growth of vertical ZnO nanowires on FeCrAl substrates. The pre-annealing prior to growth appears to preferentially segregate Al and O to the surface, thus leading to a self-forming, thin pseudo-buffer layer, which then results in vertical nanowire growth as on sapphire substrates. Metal substrates are more suitable and cheaper than others for applications in piezoelectric devices, and thin self-forming layers can also reduce interfacial resistance to electrical and thermal conduction.

show abstract

“…The excess carrier may have originated from the Sb vacancies in InSb nanowires. A previous semiconductor-related work described the vacancy-induced high carrier concentration in 1-D nanoscale because the nanowires with a high surface-to-volume ratio easily led to more vacancies [23-26]. Moreover, previous works observed that the synthesized InSb nanowires indeed have a high electron concentration, which is about 3 orders of magnitude higher than those of bulk and thin films [13,14,19,27].…”

Section: Resultsmentioning

confidence: 99%

Room temperature-synthesized vertically aligned InSb nanowires: electrical transport and field emission characteristics

Kuo

Lin

2013

Nanoscale Res Lett

View full text Add to dashboard Cite

Vertically aligned single-crystal InSb nanowires were synthesized via the electrochemical method at room temperature. The characteristics of Fourier transform infrared spectrum revealed that in the syntheses of InSb nanowires, energy bandgap shifts towards the short wavelength with the occurrence of an electron accumulation layer. The current–voltage curve, based on the metal–semiconductor–metal model, showed a high electron carrier concentration of 2.0 × 1017 cm−3 and a high electron mobility of 446.42 cm2 V−1 s−1. Additionally, the high carrier concentration of the InSb semiconductor with the surface accumulation layer induced a downward band bending effect that reduces the electron tunneling barrier. Consequently, the InSb nanowires exhibit significant field emission properties with an extremely low turn-on field of 1.84 V μm−1 and an estimative threshold field of 3.36 V μm−1.

show abstract

Tin oxide and indium oxide nanowire transport characteristics: influence of oxygen concentration during synthesis

Cited by 11 publications

References 38 publications

High sensitivity of middle-wavelength infrared photodetectors based on an individual InSb nanowire

High sensitivity of middle-wavelength infrared photodetectors based on an individual InSb nanowire

Vertical ZnO nanowire growth on metal substrates

Room temperature-synthesized vertically aligned InSb nanowires: electrical transport and field emission characteristics

Contact Info

Product

Resources

About