Time dependent dielectric breakdown of paraelectric barium-strontium-titanate thin film capacitors for memory device applications

Abstract

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Enhanced leakage current performance and conduction mechanisms of Bi1.5Zn1.0Nb1.5O7/Ba0.5Sr0.5TiO3 bilayered thin films

“…This will extremely impact the device lifetime and long-term reliability, and it is considered as one of the causes of high dielectric loss. 1,2 Apparently leakage must be kept sufficiently low, especially in the applied field region.…”

Influence of sputter deposition parameters on the properties of tunable barium strontium titanate thin films for microwave applications

“…In addition to the related power consumption, the leakage current has also an influence on their lifetime and reliability. 14 Based on the evaluation of all these specific properties of the ferroelectric film as well as of the device, an optimal trade-off can be found for the different possible microwave applications to build high performance components.…”

Reliability Performances of BST Capacitors for Impedance Tuning Applications

“…To describe the time-to-breakdown evolution as a function of voltage stress level, different mathematical model structures can be proposed. For BST material, the power law model was found to describe fairly well the voltage acceleration effect of breakdown mechanisms (6,9,10): η = C . V -n [4] As can be observed from figure 5, the power law appears to be effectively well appropriate to account for the voltage acceleration of failure mechanism, with a voltage acceleration parameter evaluated at n = 4.7.…”

“…(1/N) 1/β . (-ln(1-F)) 1/β [10] The last two parts of the final reliability model proposed in equation 10 deals with the failure rate issue on the one hand, and the capacitors number on the other hand. Both components turn out to be directly controlled by the β parameter of Weibull distributions, directly related to the statistical signature of breakdown.…”