Time Dependent, Dielectric Breakdown Characteristics of Ta2 O 5 / SiO2 Double Layers

Nishioka, Yasushiro; Shinriki, Hiroshi; Mukai, K.

doi:10.1149/1.2096760

J. Electrochem. Soc.

1989

DOI: 10.1149/1.2096760

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Time Dependent, Dielectric Breakdown Characteristics of Ta2 O 5 / SiO2 Double Layers

Yasushiro Nishioka

Hiroshi Shinriki

K. Mukai

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1992

1999

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Cited by 4 publications

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“…= 546.1 nm (12)), and high ionic conductivity, respectively. The Ta205 films for such applications have been prepared by thermal oxidation (13)(14)(15), anodic oxidation (16)(17)(18), reactive sputtering (19,20), ion plating (21), or chemical vapor deposition (1,5,8,(22)(23)(24)(25)(26). Among these methods, metalorganic chemical vapor deposition (MOCVD) using thermal decomposition reactions of tantalum alkoxides has the following advantages: lower processing temperature, good uniformity of films, low defect density of films, good step-coverage, and facilities for the formation of multiple layer or composite oxide films.…”

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Ellipsometric Examination of Growth and Dissolution Rates of Ta2 O 5 Films Formed by Metalorganic Chemical Vapor Deposition

Sugimoto

1992

J. Electrochem. Soc.

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The formation process of Ta2O5 films in MOCVD using pentamethoxy tantalum (PMT) as a metal organic source and O2 as reactant gas has been analyzed by in situ ellipsometry at deposition temperatures of 473–773 K. According to the change in the growth rate of the films, the formation process can be divided into three stages, the initial, the transition, and the final stages. The growth rate and the optical constant of the films were found to depend on the deposition temperature and the deposition time. All the films obtained at temperatures of 473–773 K had amorphous structures. The corrosion resistance of the films against a buffered HF solution depended on the deposition temperature. By annealing at 923 K in the air for 3.6 ks, amorphous Ta2O5 films deposited at temperatures higher than 673 K were transformed into polycrystalline structures. Ta2O5 films crystallized by annealing showed extremely high corrosion resistances.

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Ellipsometric Examination of Growth and Dissolution Rates of Ta2 O 5 Films Formed by Metalorganic Chemical Vapor Deposition

Sugimoto

1992

J. Electrochem. Soc.

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Chemical Vapor Deposition of Tantalum Oxide from Tetraethoxo(β-diketonato)tantalum(V) Complexes

Pollard

Puddephatt

1999

Chem. Mater.

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The complexes [Ta(OEt) 4 (β-diketonate)] (β-diketonate ) acetylacetonate, 2; hexafluoroacetylacetonate , 3; 1,1,1-trifluoroacetylacetonate, 4; dipivaloylmethanate, 5; 2,2-dimethyl-6,6,7,7,8,8,8-heptafluoro-3,5-octanedionate, 6) are established as volatile liquid precursors for low-pressure chemical vapor deposition (CVD) of films of tantalum(V) oxide. They give thermal CVD at a slightly lower temperature than the commonly used precursor [{Ta-(OEt) 5 } 2 ], 1. In all cases, the CVD at 300-450 °C gives amorphous films of Ta 2 O 5 , which crystallize on annealing at 800 °C under oxygen. Promotion of Ta 2 O 5 film formation is established using catalyst-enhanced CVD with a palladium precursor as "catalyst" and the minimum CVD temperature is then reduced to 200 °C.

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Electrical characteristics of ferroelectric PZT thin films for DRAM applications

Moazzami

Shepherd

1992

IEEE Trans. Electron Devices

268

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Time Dependent, Dielectric Breakdown Characteristics of Ta2 O 5 / SiO2 Double Layers

Cited by 4 publications

References 14 publications

Ellipsometric Examination of Growth and Dissolution Rates of Ta2 O 5 Films Formed by Metalorganic Chemical Vapor Deposition

Ellipsometric Examination of Growth and Dissolution Rates of Ta2 O 5 Films Formed by Metalorganic Chemical Vapor Deposition

Chemical Vapor Deposition of Tantalum Oxide from Tetraethoxo(β-diketonato)tantalum(V) Complexes

Electrical characteristics of ferroelectric PZT thin films for DRAM applications

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