THz Plasma Field Effect Transistor Detectors

Akter, Naznin; Pala, Nezih; Knap, W.; Shur, M. S.

doi:10.1002/9781119460749.ch8

Cited by 7 publications

(4 citation statements)

References 111 publications

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“…This prediction might be revised with improvements in materials quality Relentless scaling of the feature sizes of field-effect transistors down to the minimum feature sizes of 2 nm [33] pushed the cutoff frequencies of Si CMOS and BiCMOS up into the THz band. In the overdamped plasmonic regimes, the shortchannel Si CMOS and MOS could operate at high frequencies as THz detectors [10], [16][17][18], [34,35], mixers [36], and spectrometers [32,37,38] of sub-THz radiation. The Si-MOS integration with diamond sub-THz and THz emitters might meet stringent requirements for THz electronics enabling a potential transition to 6G wireless communications.…”

Section: Discussionmentioning

confidence: 99%

“…THz range (0.1 THz to 30 THz) for organic and chemical matter detection. [9] Emerging plasmonic TeraFETs [10][11][12] and TeraFET arrays [13][14][15] have the potential to meet the challenging task of developing inexpensive efficient, reliable 6G transceivers. The receiver part of this puzzle is easier to solve since CMOS sub-THz and THz sub-THz and THz detectors have been demonstrated.…”

Section: Introductionmentioning

confidence: 99%

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Potential of ultra-wideband gap semiconductors for sub-THz and THz applications

Shur

2023

Terahertz, RF, Millimeter, and Submillimeter-Wave Technology and Applications XVI

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Applications of terahertz (THz) and sub-THz technology require portable, inexpensive, efficient, and reliable THz electronics. This stimulated the search for novel semiconductor materials for THz applications. This paper evaluates the potential of ultra-wide bandgap semiconductors (UWBGS) for THz and sub-THz applications. The wide bandgap is the consequence of strong bonds between the nearest neighbors in UWBGS, such as diamond, boron nitride, and aluminum nitride. This is the consequence of small atomic radii of carbon and nitrogen forming intimate contacts with their nearest neighbors. The resulting high energies of optical phonons in these materials lead to superior transport properties, including high breakdown voltages and long mean free paths of electrons in the conduction band and holes in the valence band. These factors make ultra-wideband semiconductors prime candidates for high-power and high-frequency applications. The analysis of the cutoff frequencies and quality factor of plasma oscillations show that diamond has a high potential as an active material for Terahertz Field Effect Transistors (TeraFETs) generating THz and sub-THz radiation, including radiation in the 300 GHz range, which is of special interest for 6G communications. Boron nitride should enable high cutoff frequencies of operation in collision-dominated regimes.

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Section: Discussionmentioning

confidence: 99%

Section: Introductionmentioning

confidence: 99%

Potential of ultra-wideband gap semiconductors for sub-THz and THz applications

Shur

2023

Terahertz, RF, Millimeter, and Submillimeter-Wave Technology and Applications XVI

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“… ( a ) p-diamond quality factor (Q) vs. frequency for room temperature momentum relaxation times [ 18 , 323 ], ( b ) momentum relaxation time and quality factor (Q) of different materials as a function of mobility and effective mass at 300 GHz [ 324 ], ( c ) momentum relaxation time of different materials for measured values of mobility [ 19 ], and ( d ) ultimate response times for different materials vs. their carrier mobilities [ 19 ]. …”

Section: Figurementioning

confidence: 99%

Diamond for High-Power, High-Frequency, and Terahertz Plasma Wave Electronics

Hasan,

Wang,

Pala

et al. 2024

Nanomaterials

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High thermal conductivity and a high breakdown field make diamond a promising candidate for high-power and high-temperature semiconductor devices. Diamond also has a higher radiation hardness than silicon. Recent studies show that diamond has exceptionally large electron and hole momentum relaxation times, facilitating compact THz and sub-THz plasmonic sources and detectors working at room temperature and elevated temperatures. The plasmonic resonance quality factor in diamond TeraFETs could be larger than unity for the 240–600 GHz atmospheric window, which could make them viable for 6G communications applications. This paper reviews the potential and challenges of diamond technology, showing that diamond might augment silicon for high-power and high-frequency compact devices with special advantages for extreme environments and high-frequency applications.

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“…Short channel field effect transistors [2,3] have tremendous potential to go beyond their cutoff frequencies using plasma wave excitations to detect and eve generate the THz and sub-THz radiation [4]. Encouraged by this phenomenon various material combinations have been explored to develop terahertz field-effect transistors (TeraFETs) [5][6][7] for terahertz imaging [8], generation [9], detection [10], and wireless communication [11] in recent decades as a potential candidate for terahertz applications. Silicon [12], graphene [13], and InGaAs [5] based TeraFETs have been reported to be working in the THz and sub-THz bands.…”

Section: Introductionmentioning

confidence: 99%

Diamond plasmonic terahertz detectors

Hasan

Pala²,

Shur

2023

Image Sensing Technologies: Materials, Devices, Systems, and Applications X

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This paper reports on the characteristics of the plasmonic phenomena in diamond FET devices at THz frequencies. We present a detailed numerical study of the terahertz resonant response of n-diamond TeraFETs as a function of temperature and channel length, demonstrate their potential for emerging terahertz applications, and compare their performance with that for p-diamond devices. The results show that short channel n-diamond TeraFETs exhibit a resonant response at room and cryogenic temperatures. We also report on the impact of the amplitude of the impinged THz signal and gate-to-channel separation on the induced voltage response. In our analysis, we have accounted for the effect of the viscosity of the electron fluid in the channel which is one of the major contributors to the damping of the plasma waves.

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THz Plasma Field Effect Transistor Detectors

Cited by 7 publications

References 111 publications

Potential of ultra-wideband gap semiconductors for sub-THz and THz applications

Potential of ultra-wideband gap semiconductors for sub-THz and THz applications

Diamond for High-Power, High-Frequency, and Terahertz Plasma Wave Electronics

Diamond plasmonic terahertz detectors

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