Diamond for High-Power, High-Frequency, and Terahertz Plasma Wave Electronics

Abstract

High thermal conductivity and a high breakdown field make diamond a promising candidate for high-power and high-temperature semiconductor devices. Diamond also has a higher radiation hardness than silicon. Recent studies show that diamond has exceptionally large electron and hole momentum relaxation times, facilitating compact THz and sub-THz plasmonic sources and detectors working at room temperature and elevated temperatures. The plasmonic resonance quality factor in diamond TeraFETs could be larger than unity for the 240–600 GHz atmospheric window, which could make them viable for 6G communications applications. This paper reviews the potential and challenges of diamond technology, showing that diamond might augment silicon for high-power and high-frequency compact devices with special advantages for extreme environments and high-frequency applications.

Enhancing the Reverse Threshold Limit for Heteroepitaxial Diamond-Based Pseudovertical Schottky Diodes: Dependency on the Metal Contact Size

“…11 Controlling the dislocation density during or after the growth can significantly improve the diamond quality. 12,13 Ohmagari et al introduced the metal-assisted termination (MAT) novel technique that successfully reduces the effect of these dislocations by submerging the defect killer. 14 MAT technique suppresses killer defects by introducing an in situ heavily W-doped layer grown using hot filament chemical vapor deposition (HFCVD).…”