Diamond plasmonic terahertz detectors

Abstract

This paper reports on the characteristics of the plasmonic phenomena in diamond FET devices at THz frequencies. We present a detailed numerical study of the terahertz resonant response of n-diamond TeraFETs as a function of temperature and channel length, demonstrate their potential for emerging terahertz applications, and compare their performance with that for p-diamond devices. The results show that short channel n-diamond TeraFETs exhibit a resonant response at room and cryogenic temperatures. We also report on the impact of the amplitude of the impinged THz signal and gate-to-channel separation on the induced voltage response. In our analysis, we have accounted for the effect of the viscosity of the electron fluid in the channel which is one of the major contributors to the damping of the plasma waves.

Diamond for High-Power, High-Frequency, and Terahertz Plasma Wave Electronics

“…Various analytical and numerical studies have been conducted to analyze the THz detection and emission process by diamond TeraFET using hydrodynamic modeling [ 19 , 20 , 324 , 325 , 326 ]. Figure 15 a,b shows the diagrams of the detection and emission processes using diamond TeraFETs.…”

“…Figure 15 a,b shows the diagrams of the detection and emission processes using diamond TeraFETs. Numerical simulations were reported on the resonant response of sub-THz and THz radiation in p [ 19 , 20 , 327 ] and n-diamond [ 324 , 326 ] TeraFET at cryogenic and room temperature, as predicted in the earlier analysis of the diamond’s material properties. P-diamond TeraFETs with over 100 nm channel length should be able to achieve a resonant response even at room temperature.…”