Threshold voltage shift prediction for gate bias stress on amorphous InGaZnO thin film transistors

Park, Suehye; Cho, Edward Namkyu; Yun, Ilgu

doi:10.1016/j.microrel.2012.07.005

Cited by 21 publications

(10 citation statements)

References 20 publications

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“…This indicates a decrease of the driver TFT’s (

) resistance comparatively to the load TFT (

) as stress time is increased. The effect can be understood by analyzing the bias stress conditions of each transistor: By fixing

= 4.5 V,

= 5.2 V. Hence, since

= 10 V,

= 4.8 V. With lower

and higher

, the

shift for T1 is smaller than for T2 [ 22 , 23 ]. Given that close to

T1 is operating in linear regime, R

is decreased for longer stress periods.…”

Section: Circuits Measurements and Discussionmentioning

confidence: 99%

Bias Stress and Temperature Impact on InGaZnO TFTs and Circuits

et al. 2017

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This paper focuses on the analysis of InGaZnO thin-film transistors (TFTs) and circuits under the influence of different temperatures and bias stress, shedding light into their robustness when used in real-world applications. For temperature-dependent measurements, a temperature range of 15 to 85 °C was considered. In case of bias stress, both gate and drain bias were applied for 60 min. Though isolated transistors show a variation of drain current as high as 56% and 172% during bias voltage and temperature stress, the employed circuits were able to counteract it. Inverters and two-TFT current mirrors following simple circuit topologies showed a gain variation below 8%, while the improved robustness of a cascode current mirror design is proven by showing a gain variation less than 5%. The demonstration that the proper selection of TFT materials and circuit topologies results in robust operation of oxide electronics under different stress conditions and over a reasonable range of temperatures proves that the technology is suitable for applications such as smart food packaging and wearables.

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“…This indicates a decrease of the driver TFT’s (

) resistance comparatively to the load TFT (

) as stress time is increased. The effect can be understood by analyzing the bias stress conditions of each transistor: By fixing

= 4.5 V,

= 5.2 V. Hence, since

= 10 V,

= 4.8 V. With lower

and higher

, the

shift for T1 is smaller than for T2 [ 22 , 23 ]. Given that close to

T1 is operating in linear regime, R

is decreased for longer stress periods.…”

Section: Circuits Measurements and Discussionmentioning

confidence: 99%

Bias Stress and Temperature Impact on InGaZnO TFTs and Circuits

et al. 2017

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“…Nevertheless, the OFF level fully recovered within 15 min of relaxation time after completion of the bias stress, which makes the respective device one of the most performant devices ever reported for bias stress. [55,56,57,58,59] The OFETs and bias stress parameters are summarized in Table 4, while the composition of the two resins is displayed in Tables 1, 2, and 3.…”

Section: Wwwadvsustainsyscommentioning

confidence: 99%

Pinaceae Fir Resins as Natural Dielectrics for Low Voltage Operating, Hysteresis‐Free Organic Field Effect Transistors

Ivić

Petritz

Irimia

et al. 2022

Advanced Sustainable Systems

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Natural dielectrics are emerging nowadays as a niche selection of materials for applications targeting biocompatibility and biodegradability for electronics and sensors within the overall effort of scientific community to achieve sustainable development and to build environmental consciousness. The two natural resins analyzed in this study, silver fir and Rocky mountain fir demonstrate robust dielectric properties and excellent film forming capabilities, while being trap free dielectrics in high‐performance organic field effect transistors (OFETs) operating at voltages as low as 1 V. Immense research possibilities are demonstrated through the avenue of inorganic nanofillers insertions in the natural resins film, that opens the door for fabrication of very low voltage OFETs with high dielectric constant insulating layers.

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“…Concluding from the knowledge gained through the completion of this type of electrical test, we found it difficult to place our investigated molecules in the context of the performance of the classic van der Waals bonded semiconductors, since a need of standardization of these tests is imperiously necessary. With this respect, the literature offers a very broad view of bias stress conditions, with the time of the test ranging from minutes, to hours, days and even weeks. − …”

Section: H Bonded Semiconductors Operational (Electrical)stability In...mentioning

confidence: 99%

Stability of Selected Hydrogen Bonded Semiconductors in Organic Electronic Devices

et al. 2019

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The electronics era is flourishing and morphing itself into Internet of Everything, IoE. At the same time, questions arise on the issue of electronic materials employed: especially their natural availability and low-cost fabrication, their functional stability in devices, and finally their desired biodegradation at the end of their life cycle. Hydrogen bonded pigments and natural dyes like indigo, anthraquinone and acridone are not only biodegradable and of bio-origin but also have functionality robustness and offer versatility in designing electronics and sensors components. With this Perspective, we intend to coalesce all the scattered reports on the above-mentioned classes of hydrogen bonded semiconductors, spanning across several disciplines and many active research groups. The article will comprise both published and unpublished results, on stability during aging, upon electrical, chemical and thermal stress, and will finish with an outlook section related to biological degradation and biological stability of selected hydrogen bonded molecules employed as semiconductors in organic electronic devices. We demonstrate that when the purity, the long-range order and the strength of chemical bonds, are considered, then the Hydrogen bonded organic semiconductors are the privileged class of materials having the potential to compete with inorganic semiconductors. As an experimental historical study of stability, we fabricated and characterized organic transistors from a material batch synthesized in 1932 and compared the results to a fresh material batch.

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Threshold voltage shift prediction for gate bias stress on amorphous InGaZnO thin film transistors

Cited by 21 publications

References 20 publications

Bias Stress and Temperature Impact on InGaZnO TFTs and Circuits

Bias Stress and Temperature Impact on InGaZnO TFTs and Circuits

Pinaceae Fir Resins as Natural Dielectrics for Low Voltage Operating, Hysteresis‐Free Organic Field Effect Transistors

Stability of Selected Hydrogen Bonded Semiconductors in Organic Electronic Devices

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