Threshold voltage extraction method in field-effect devices with power-law dependence of mobility on carrier density

Mosser, V.; Seron, D.; Haddab, Y.

doi:10.1109/icmts.2015.7106121

Cited by 5 publications

(3 citation statements)

References 9 publications

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“…Most common extraction methods were also applied to extract the threshold voltage in similar conditions. e extracted values using HEEM were found to accord with other recognized V TH extraction methods [24,25]. e outcomes of various extraction methods for 180 nm test device are shown in Table 2.…”

Section: Execution Of Heem On Test Devicementioning

confidence: 65%

“…For generalization of the outcomes, uniform doping is deemed all through the bulk [24,25]. Gaussian doping with the maximum limit of 10 20 cm −3 is modeled in source and drain regions for realistic results, whereas the extensions are planted and doped with the concentration of 10 19 cm −3 to reduce the GIDL consequences.…”

Section: Execution Of Heem On Test Devicementioning

confidence: 99%

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Modeling, Simulation, and Analysis of Novel Threshold Voltage Definition for Nano-MOSFET

Swami¹,

Rai²

2017

Journal of Nanotechnology

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.reshold voltage (V TH ) is the indispensable vital parameter in MOSFET designing, modeling, and operation. Diverse expounds and extraction methods exist to model the on-o transition characteristics of the device. e governing gauge for e cient threshold voltage de nition and extraction method can be itemized as clarity, simplicity, precision, and stability throughout the operating conditions and technology node. e outcomes of extraction methods diverge from the exact values due to various short-channel e ects (SCEs) and nonidealities present in the device. A new approach to de ne and extract the real value of V TH of MOSFET is proposed in the manuscript. e subsequent novel enhanced SCE-independent V TH extraction method named "hybrid extrapolation V TH extraction method" (HEEM) is elaborated, modeled, and compared with few prevalent MOSFET threshold voltage extraction methods for validation of the results. All the results are veri ed by extensive 2D TCAD simulation and con rmed analytically at various technology nodes.

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Section: Execution Of Heem On Test Devicementioning

confidence: 65%

Section: Execution Of Heem On Test Devicementioning

confidence: 99%

Modeling, Simulation, and Analysis of Novel Threshold Voltage Definition for Nano-MOSFET

Swami¹,

Rai²

2017

Journal of Nanotechnology

View full text Add to dashboard Cite

show abstract

“…2). The transfer curves of the pentacene-based OFET were measured in the linear regime ( V DS = −2 V) at various temperatures between 293 K and 373 K. For the parameter extraction at each temperature, the power-law exponent γ and the effective threshold voltage V eff T were extracted using the ratio method 34 (Fig. 3(a)).…”

Section: Resultsmentioning

confidence: 99%