Threshold and criterion for ion track etching in SiO2 layers grown on Si

Evolution of ion track morphology in a-SiNx:H by dynamic electronic energy loss

“…The increasing density in turn leads to increased S e (Figure 2b), and the consequence of which in this case, appears as an increase in the track core diameter. The result is in agreement with reports of Vlasukova et al 18 and Kitayama et al 11 , wherein the track core width is found to increase with the S e for monoatomic ion species for irradiation. Similarly, in the past Meftah et al 19 have also estimated the effective track radius to increase with increasing S e .…”

Peculiarities of latent track etching in SiO2/Si structures irradiated with Ar, Kr and Xe ions

“…An irradiation of SiO 2 /Si structures with swift heavy ions to form ion tracks in SiO 2 layers grown on silicon templates have attracted great interest in recent years. The latent tracks formed in SiO 2 along the swift ion trajectories can be transformed into a nanochannel system by means of chemical treatment in certain etchants [1][2][3][4][5]. The model involves the thermalization of the electronic subsystem of a solid within a time not exceeding 10 À14 s. A few picoseconds later, the electron-phonon interaction leads to fast heating of the region along the fast ion trajectory.…”

Structural Evolution and Photoluminescence of SiO2 Layers with Sn Nanoclusters Formed by Ion Implantation

“…There is one peculiarity which additionally proves the formation of the SnO 2 phase. Earlier, we estimated that the etch velocity of SiO 2 layers thermally grown on Si substrates amounted to ≈18 nm/min [35]. Hence, one could expect that the thickness of the SiO 2 layer removed during 3 min etching should be about 50 nm, and it could be noticed via the film color change between the protected and unprotected regions of the etched sample.…”