Peculiarities of latent track etching in SiO2/Si structures irradiated with Ar, Kr and Xe ions

Alzhanova, A.; Dauletbekova, А.; Komarov, F. F.; Власукова, Л. А.; Yuvchenko, V. N.; Аkilbekov, A.; Zdorovets, Maxim V.

doi:10.1016/j.nimb.2015.08.046

Cited by 19 publications

(22 citation statements)

References 13 publications

(14 reference statements)

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“…where h',h -generation and registration depths of a particle respectively, n-interactions number, E 0primary particle initial energy, l=1/ 0 ak,  0 , a, k, E 0 -the approximation parameters entering the following recurrence relation [12][13][14][15][16][17][18]:…”

Section: Resultsmentioning

confidence: 99%

“…When calculating CPF depending on interactions number and particles penetration depth and also vacancy type nanoclusters concentration needs to find real result finding area. We will note the main regularities when calculating CPF depending on interactions number arising when result finding area for various flying particles and heavy targets [11][12][13][14][15].…”

Section: Resultsmentioning

confidence: 99%

“…Passing ions through substance is a difficult task as during creation physical, and mathematical models. A set of the flying particles types and targets of Mendeleev's Periodic system represents a huge elements number [9][10][11][12][13][14]. At the same time it is possible to consider various situations when the flying particles mass number are less than a target atomic number, it is commensurable with a target atomic number and a case when the flying particle atomic weight is more or much more target atomic number.…”

Section: Introductionmentioning

confidence: 99%

See 2 more Smart Citations

Computer modelling of distributions processes on vacancy nanoclusters depth in the heavy targets irradiated with ions

Komarov

Купчишин

Kuatbayeva

et al. 2017

Int. j. math. phys.

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Creation new materials with unique properties is one of priority researches areas, both in physics, and in technique. The study of small metal particles properties from atoms hundreds and thousands is of great interest by their possible usage as materials or surface nanostructures. The fact that nanomaterial properties considerably depend on the particles properties making them is undoubted. The free clusters internal structure research could play a key role in an explanation of their physical or chemical features. Work is assigned to obtaining the regularities arising when modeling radiation processes in the heavy ions irradiated with various ions. The regularities arising when calculating cascade and probabilistic functions depending on particles penetration depth, interactions number are found. Real areas finding the radiation defects concentration result are defined, calculations for various flying particles and heavy targets in the energy range 100-1000 keV are made. Calculations results are presented in the schedules and tables form.

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Section: Resultsmentioning

confidence: 99%

Section: Resultsmentioning

confidence: 99%

Section: Introductionmentioning

confidence: 99%

See 1 more Smart Citation

Computer modelling of distributions processes on vacancy nanoclusters depth in the heavy targets irradiated with ions

Komarov

Купчишин

Kuatbayeva

et al. 2017

Int. j. math. phys.

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“…A promising and rapidly developing direction in this field is the structures containing nanodimensional heterogeneity as an alternative to standard lithographic techniques in micro-and nanoelectronics [4][5][6][7]. Amorphous silicon dioxide on silicon substrate can RFYS be used as matrix.…”

Section: Introductionmentioning

confidence: 99%

“…Amorphous silicon dioxide on silicon substrate can RFYS be used as matrix. After irradiation with swift heavy ions (SHI) and the subsequent etching in hydrofluoric acid solution, the system of nanochannels divided by dielectric layer is created [4]. The obtained template with the nanopores system can be used for creation of nanoclusters of semiconductors as well as for development an active elements of gas sensors and light emission diodes (LED), also another various electronic devices.…”

Section: Introductionmentioning

confidence: 99%

X-ray Diffraction Investigation of Sio2/Si Track Templates with Deposited Zn

Dauletbekova¹,

Alzhanova²,

Akylbekov³

et al. 2018

KEG

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Express Method of Estimation of Etched Ion Track Parameters in Silicon Dioxide Template

Yakimchuk

Bundyukova

Smirnov³

et al. 2018

Physica Status Solidi (b)

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It is proposed to use the ellipsometry as an express method of estimating etched ion track parameters in a silicon dioxide template. Ellipsometric studies are carried out on a series of SiO2/Si templates with pores in the silicon oxide layer. Using the standard model of the interaction of a polarized light beam with a layered structure of silicon oxide on silicon, the basic parameters of the pores are determined through mathematical transformations. In order to determine the validity of the proposed model the results obtained with the ellispometry were compared with the data of scanning electron microscopy. Limitations of the proposed method are discussed.

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Peculiarities of latent track etching in SiO2/Si structures irradiated with Ar, Kr and Xe ions

Cited by 19 publications

References 13 publications

Computer modelling of distributions processes on vacancy nanoclusters depth in the heavy targets irradiated with ions

Computer modelling of distributions processes on vacancy nanoclusters depth in the heavy targets irradiated with ions

X-ray Diffraction Investigation of Sio2/Si Track Templates with Deposited Zn

Express Method of Estimation of Etched Ion Track Parameters in Silicon Dioxide Template

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