Three-Dimensional Voids Simulation in chip Metallization Structures: a Contribution to Reliability Evaluation

Effect of test condition and stress free temperature on the electromigration failure of Cu dual damascene submicron interconnect line-via test structures

“…The mathematical formulations for the atomic flux (AF) and AFD due to the electron-wind force (EWM), stress-migration (SM) and thermo-migration (TM) are taken from the work done by Dalleau et al [17] and Rzepka et al [18], where the individual atomic fluxes due to EWM, SM and TM are computed and added to obtain the resultant AF and corresponding AFD. As only time zero EM test condition is considered in this modelling, the atomic concentration of Cu is taken as uniform [4,17].…”

“…As only time zero EM test condition is considered in this modelling, the atomic concentration of Cu is taken as uniform [4,17].…”

“…Finite element analysis (FEA) is used for the investigation. The maximum positive atomic flux divergence (AFD) is taken as the failure site [16,17]. Two cases are studied with FEA.…”

Enhanced finite element modelling of Cu electromigration using ANSYS and matlab

“…To predict the potential void starting locations in interconnections, finite element analysis using ANSYS is commonly employed [1][2][3][4]. However, due to the computational limitation of ANSYS postprocessing module, the formulae of atomic flux divergence (AFD) are needed for its computation, and Dalleau and Weide-Zaage has provided the approximated AFD formulae [1].…”

Physically-based simulation of electromigration induced failures in copper dual-damascene interconnect

“…This recurring re-meshing followed by coupled multiphysics simulation makes it extremely difficult to reach a converged solution. Another approach to capturing the void nucleation and growth by means of simulations with a FEM code was described by Weide-Zaage and coworkers [15]. This approach deals with modification of the material properties of the portion of conductor occupied by the growing void.…”