Three-dimensional transient model for time-domain free-carrier absorption measurement of excess carriers in silicon wafers

Ren, Shengdong; Li, Bincheng; Huang, Qiuping

doi:10.1063/1.4852417

Journal of Applied Physics

2013

DOI: 10.1063/1.4852417

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Three-dimensional transient model for time-domain free-carrier absorption measurement of excess carriers in silicon wafers

Shengdong Ren¹,

Bincheng Li²,

Qiuping Huang³

Abstract: A three-dimensional transient model for time-domain (modulated) free-carrier absorption (FCA) measurement was developed to describe the transport dynamics of photo-generated excess carriers in silicon (Si) wafers. With the developed transient model, numerical simulations were performed to investigate the dependences of the waveforms of the transient FCA signals on the electronic transport parameters of Si wafers and the geometric parameters of the FCA experiment. Experimental waveforms of FCA signals of both n… Show more

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Cited by 3 publications

References 22 publications

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Electronic transport characterization of silicon wafers by spatially resolved steady-state photocarrier radiometric imaging

Wang

2015

Journal of Applied Physics

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Spatially resolved steady-state photocarrier radiometric (PCR) imaging technique is developed to characterize the electronic transport properties of silicon wafers. Based on a nonlinear PCR theory, simulations are performed to investigate the effects of electronic transport parameters (the carrier lifetime, the carrier diffusion coefficient, and the front surface recombination velocity) on the steady-state PCR intensity profiles. The electronic transport parameters of an n-type silicon wafer are simultaneously determined by fitting the measured steady-state PCR intensity profiles to the three-dimensional nonlinear PCR model. The determined transport parameters are in good agreement with the results obtained by the conventional modulated PCR technique with multiple pump beam radii.

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Electronic transport characterization of silicon wafers by spatially resolved steady-state photocarrier radiometric imaging

Wang

2015

Journal of Applied Physics

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Diffusion and recombination of optically-injected carriers in a semiconductor wafer in 3-dimensions

Boyd

Kleiman

2019

Journal of Applied Physics

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In this work, we derive a general equation describing the transmission of a probe beam in a pump/probe experiment upon optical injection of carriers into a semiconductor. The pump/probe radial overlap equation generalizes previous pump/probe approaches by considering the pump and probe beam sizes relative to each other and to the diffusion length. The pump/probe equation leverages a powerful solution to the free-carrier density under optical injection that is also derived in this work. The free-carrier density solution extends the work of Luke and Cheng to 3-dimensions, incorporating the effects of radial diffusion in a plane parallel to the semiconductor surface. The pump/probe equation quantifies the magnitude of free-carrier absorption of a probe beam induced by free-carriers optically injected via a pump beam. We show that when the pump/probe beams are much smaller than the carrier diffusion length, radial diffusion effects dominate. Measurements in this regime can be used to uniquely and simultaneously determine both the effective carrier lifetime and the diffusion coefficient. The equation agrees well with experimental measurements using a recently developed single-beam pump/probe technique, which ensures a perfect overlap of the pump and probe beams. Based on this equation, measurement criteria are developed for accurate determination of carrier lifetime and to correct for the effects of radial diffusion.

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Determination of carrier bulk lifetime and surface recombination velocity in semiconductor from double-wavelength free carrier absorption

Wang¹,

Liu²,

Gong³

et al. 2018

Acta Phys. Sin.

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In microelectronic and photovoltaic industry, semiconductors are the basic materials in which impurities or defects have a serious influence on the properties of semiconductor-based devices. The determination of the electronic transport properties, i.e., the carrier bulk lifetime (τ) and the front surface recombination velocity (S1), is important for evaluating the semiconductor material. In this paper, a method of simultaneously measuring the bulk lifetime and the front surface recombination rate of semiconductor material by using double-wavelength free carrier absorption technique is presented. The effect of the carrier bulk lifetime and the front surface recombination rate on the modulated free carrier absorption signal (Ampratio and Phadiff) are qualitatively analyzed. The process of extracting the bulk lifetime and the front surface recombination rate by the proposed double-wavelength free carrier absorption method are also given. At the same time, the uncertainties of the parameters extracted by this method are calculated and compared with those obtained by the traditional frequency-scan free carrier absorption technique. The results show that the proposed method can significantly reduce the uncertainties of the measurement parameters, especially for the samples with higher surface recombination rate. For the sample with a lower front surface recombination rate (S1=102 m/s), the uncertainty of the carrier bulk lifetime and the front surface recombination velocity obtained by the proposed method are almost in agreement with those obtained by the conventional frequency-scan method. On the contrary, for the samples with higher front surface recombination rate (S1 ≥ 103 m/s), the uncertainties of the carrier transport parameters are much smaller than those from the conventional frequency-scan method. For example, the estimated uncertainty of the carrier bulk lifetime and the front surface recombination velocity for the sample with τ=10 μs and S1=103 m/s are approximately ±5.55% and ±2.83% by the proposed method, which are more improved than ±18.50% and ±31.46% by the conventional frequency-scan method with a wavelength of 405 nm. Finally, we explain the above phenomenon by analyzing the distribution of excess carrier concentration at different pump wavelengths. As the pump wavelength decreases, the more excess carriers are excited near the surface of the sample due to the greater absorption coefficient, and the influence of the surface recombination by the impurities and defects on the signal is more obvious. Therefore, the measurement accuracy of the front surface recombination rate can be improved effectively by using double wavelength pumping.

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Three-dimensional transient model for time-domain free-carrier absorption measurement of excess carriers in silicon wafers

Cited by 3 publications

References 22 publications

Electronic transport characterization of silicon wafers by spatially resolved steady-state photocarrier radiometric imaging

Electronic transport characterization of silicon wafers by spatially resolved steady-state photocarrier radiometric imaging

Diffusion and recombination of optically-injected carriers in a semiconductor wafer in 3-dimensions

Determination of carrier bulk lifetime and surface recombination velocity in semiconductor from double-wavelength free carrier absorption

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