2015
DOI: 10.1063/1.4931773
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Electronic transport characterization of silicon wafers by spatially resolved steady-state photocarrier radiometric imaging

Abstract: Spatially resolved steady-state photocarrier radiometric (PCR) imaging technique is developed to characterize the electronic transport properties of silicon wafers. Based on a nonlinear PCR theory, simulations are performed to investigate the effects of electronic transport parameters (the carrier lifetime, the carrier diffusion coefficient, and the front surface recombination velocity) on the steady-state PCR intensity profiles. The electronic transport parameters of an n-type silicon wafer are simultaneously… Show more

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Cited by 6 publications
(1 citation statement)
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“…Here, τ represents the diffusion of electrons into the solution (i.e., the relaxation time) and τ′ represents the diffusion of electrons on the surface of the silicon wafer, which is about 50 μs. 51 For clarity, the initial 70% of the descending edge is used for each pulse in this work. 46 Minimal Inhibitory Concentration Determination.…”
Section: Methodsmentioning
confidence: 99%
“…Here, τ represents the diffusion of electrons into the solution (i.e., the relaxation time) and τ′ represents the diffusion of electrons on the surface of the silicon wafer, which is about 50 μs. 51 For clarity, the initial 70% of the descending edge is used for each pulse in this work. 46 Minimal Inhibitory Concentration Determination.…”
Section: Methodsmentioning
confidence: 99%