Three-Dimensional Structure of Helical and Zigzagged Nanowires Using Electron Tomography

Abstract

Electron tomography and high-resolution transmission electron microscopy were used to characterize the unique three-dimensional structures of helical or zigzagged GaN, ZnGa2O4, and Zn2SnO4 nanowires. The GaN nanowires adopt a helical structure that consists of six equivalent <011> growth directions with the axial [0001] direction. We also confirmed that the ZnGa2O4 nanosprings have four equivalent <011> growth directions with the [001] axial direction. The zigzagged Zn2SnO4 nanowires consisted of linked rhombohedrons having the side edges matched to the <110> direction and the [111] axial direction.

Single-crystalline wurtzite GaN nanowires and zigzagged nanostructures fabricated by sublimation sandwich method

“…Nevertheless, the growth direction of these twotype nanowires is different. Some literature reported that growth at lower temperature resulted in the formation of nanowires with [0 0 0 1] growth direction, while higher temperature growth led to other growth directions such as [1 01 0], [1 01 1], [11 0 0] and [1 12 0] direction [23][24][25][26]. It is found that the rate of Ga flux plays a crucial role in determining the growth direction.…”

Zigzag GaN/Ga2O3 heterogeneous nanowires: Synthesis, optical and gas sensing properties

“…Ga 2 O 3 and GaN NWs have been studied extensively in recent years. [14][15][16] However, few works focus on their NO gas sensing properties with NW integrated devices.…”

Synthesis and photoluminescence of Zn2SnO4 nanowires

“…Zn 2 SnO 4 nanoparticles have been used as photocatalysts for degradating organic pollutant [14,15] and as anode in Li-ion batteries [16,17]. Nevertheless, comparing with the Zn 2 SnO 4 films and nanoparticles, the syntheses and physical properties of Zn 2 SnO 4 nanowires have attracted less attention [18][19][20]. Due to its high electron mobility and high electrical conductivity, Zn 2 SnO 4 nanowires may be applied in electronic devices and used as perfect building blocks of assembling active and integrated nanosystems.…”